Processing device for producing semiconductor layers and coated substrates treated with elemental selenium and/or sulphur

A processing device for producing semiconductor layers and coated substrates treated with elemental selenium and/or sulphur, comprising:

• an evacuable processing chamber for receiving at least one substrate to be processed, wherein the substrate to be processed has at least one metal layer and/or at least one layer containing metal;
• a heating device for convective heating of the substrate to be processed to a predetermined substrate temperature;
• a first source of elementary selenium and/or sulphur vapor located outside the processing chamber and connected to the processing chamber via a first feed line and/or a second source of elementary selenium and/or sulphur vapor located inside the processing chamber, wherein the elementary selenium and/or sulphur vapor is guided past the metal layer and/or layer containing metal, under rough vacuum conditions or ambient pressure conditions or overpressure conditions, in order to chemically react said layer with selenium or sulphur in a controlled manner;
• and
• a gas conveying device for generating a gas flow circuit by way of forced convection in the processing chamber, wherein the substrate is heated by way of the forced convection, and wherein the elementary selenium and/or sulphur vapor is mixed and guided past the substrate by way of the forced convection,
• wherein the processing device comprises a loading opening through which a substrate stack can be inserted into the processing chamber, and a discharge opening through which the substrate stack can be removed from the processing chamber.