Semiconductor device and method of manufacturing the same
AssigneesKabushiki Kaisha Toshiba, The Regents of the University of California
InventorsHiroshi Yamada, Hideyuki Funaki, Kazuhiro Suzuki, Kazuhiko Itaya, Armon Mahajerin, Kevin Limkrailassiri, Liwei Lin
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Abstract
After a TEOS oxide film is formed on the surface of a semiconductor device, a PSG film and an SiN film, which have air permeability, are formed on the surface of the TEOS oxide film. Thereafter, a Poly-Si film is formed thereon. A sacrifice layer is removed by a gaseous HF that passes through the PSG film, the SiN film, and the Poly-Si film, and then, the uppermost layer is covered with a Poly-Si/SiC film. A chip scale package having a thin-film hollow-seal structure can be realized on the semiconductor element.
Claims8
A method of manufacturing a semiconductor device having a surface of a semiconductor substrate on which plural semiconductor elements are formed, the method comprising:
- forming an insulating film layer (Buried Oxide (BOX) layer) on a surface of a semiconductor substrate;
- forming an SOI (Silicon on Insulator) layer on a surface of the insulating film layer (BOX layer);
- removing a part of the SOI layer to form a movable portion of an electromechanical element;
- forming a TEOS (Tetra Ethyl Ortho Silicate) oxide film on a surface of the SOI layer and the insulating film layer (BOX layer) that is exposed through etching of the SOI layer;
- forming an inorganic thin film on a surface of the TEOS oxide film, the inorganic thin film including a first Poly-Si (Poly-Silicon) film;
- forming a resist mask on the first Poly-Si film;
- forming etching holes by removing a part of the first Poly-Si film using the resist mask as an etching mask;
- removing a part of the insulating film layer (BOX layer) and the TEOS oxide film through a gas-phase HF (Hydrogen Fluoride) treatment to the semiconductor substrate so as to form a hollow portion in which the movable portion of the electromechanical element is arranged and is separated from the semiconductor substrate, the TEOS oxide film, and the inorganic thin film;
- and
- sealing the semiconductor device by forming a second Poly-Si (Poly-Silicon) film or an SiC (Silicon Carbide) film on the first Poly-Si film having the etching holes, wherein
- the etching holes of the first Poly-Si film are present after the formation of the second Poly-Si film or the SiC film.
Dependencies are inferred from the claim text.