Bonded semiconductor structure with SiGeC/SiGeBC layer as etch stop
AssigneeQualcomm Switch Corp.
InventorStephen A. Fanelli
Life of this patent
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Abstract
A semiconductor structure is formed with a first wafer (e.g. a handle wafer) and a second wafer (e.g. a bulk silicon wafer) bonded together. The second wafer includes an active layer, which in some embodiments is formed before the two wafers are bonded together. A substrate is removed from the second wafer on an opposite side of the active layer from the first wafer using a SiGeC or SiGeBC layer as an etch stop. In some embodiments, the SiGeC or SiGeBC layer is formed by epitaxial growth, ion implantation or a combination of epitaxial growth and ion implantation.
Claims20
A method comprising:
- forming a first wafer having a first bonding material;
- forming a second wafer having a substrate, a SiGeBC layer, an active layer and a second bonding material, the active layer being between the SiGeBC layer and the second bonding material;
- bonding the second wafer to the first wafer at the first and second bonding materials;
- and
- removing the substrate using the SiGeBC layer as an etch stop.
A method comprising:
- forming a first wafer having a first bonding material;
- forming a second wafer having a substrate, an etch stop layer, an active layer and a second bonding material, the active layer being between the etch stop layer and the second bonding material, the etch stop layer comprising silicon, germanium, and carbon;
- bonding the second wafer to the first wafer at the first and second bonding materials;
- and
- removing the substrate using the etch stop layer.
A semiconductor structure comprising:
- a first wafer;
- a first bonding material at a surface of the first wafer;
- a second wafer bonded to the first wafer;
- an active layer within the second wafer;
- and
- a second bonding material at a surface of the second wafer and being bonded to the first bonding material;
- wherein a substrate has been removed from the second wafer on an opposite side of the active layer from the first wafer using a SiGeBC layer as an etch stop.
Dependencies are inferred from the claim text.