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US 9,223,220 B2Granted
Photo resist baking in lithography process
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorChing-Yu Chang
Life of this patent
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Abstract
A method includes coating a photo resist on a wafer in a first production tool, and performing a pre-exposure baking on the photo resist in a second production tool separate from the first production tool. After the pre-exposure baking, the photo resist is exposed using a lithography mask. After the step of exposing the photo resist, a post-exposure baking is performed on the photo resist. The photo resist is then developed.
Claims20
A method comprising:
- coating a photo resist on a wafer in a first production tool, wherein the first production tool is filled with purified air substantially free from amine;
- performing a pre-exposure baking on the photo resist in a second production tool separate from the first production tool;
- after the pre-exposure baking, exposing the photo resist using a lithography mask;
- after the step of exposing the photo resist, performing a post-exposure baking on the photo resist;
- and
- developing the photo resist.
3 more elements
A method comprising:
- coating a photo resist on a wafer in a first production tool;
- transporting the wafer along with the photo resist to a second production tool, wherein each of the first production tool and the second production tool is filled with purified air with a pressure equal to or higher than one atmosphere, with amine removed from the purified air;
- performing a pre-exposure baking on the photo resist;
- exposing the photo resist using a lithography mask;
- performing a post-exposure baking on the photo resist;
- and
- developing the photo resist, wherein the pre-exposure baking, the step of exposing the photo resist, the post-exposure baking, and the step of developing the photo resist are performed in the second production tool.
4 more elements
A method comprising:
- coating a photo resist on a wafer;
- performing a soft baking on the photo resist;
- after the soft baking, performing a pre-exposure baking on the photo resist, wherein the soft baking and the pre-exposure baking are separate baking steps separated by a waiting time, with the photo resist not baked during the waiting time;
- after the pre-exposure baking, exposing the photo resist to light;
- after the step of exposing the photo resist, performing a post-exposure baking on the photo resist;
- and
- developing the photo resist to remove exposed portions of the photo resist.
4 more elements
Dependencies are inferred from the claim text.