Deep trench structure for high density capacitor

An integrated circuit (IC), comprising:

• a semiconductor substrate having a conductive region therein and having a plurality of trenches formed in the conductive region;
• a first dielectric layer formed over respective bottom portions and respective sidewall portions of the plurality of trenches, respectively;
• a first conductive layer formed in the trenches and over the first dielectric layer, wherein the first dielectric layer acts as a first capacitor dielectric between the conductive region and the first conductive layer;
• a second dielectric layer formed in the trench and over the first conductive layer;
• and
• a second conductive layer formed in the trench and over the second dielectric layer, wherein the second dielectric layer acts as a second capacitor dielectric between the first conductive layer and the second conductive layer;
• and
• an interconnect structure providing a direct electrical connection between the conductive region and the second conductive layer.