Non-volatile memory device

A non-volatile memory device, comprising:

• a base layer;
• a first stacked unit and a second stacked unit disposed above the base layer and arranged in parallel to each other and spaced apart from each other in a first direction, in a plane parallel to the base layer, each of the first stacked unit and the second stacked unit including a plurality of electrodes stacked above the base layer and extending in a second direction perpendicular to the first direction;
• a first semiconductor layer penetrating the first stacked unit in a third direction perpendicular to the first direction and the second direction;
• a second semiconductor layer penetrating the second stacked unit in the third direction;
• a first memory film disposed between the first semiconductor layer and the first stacked unit;
• a second memory film disposed between the second semiconductor layer and the second stacked unit;
• an insulator disposed between the first stacked unit and the second stacked unit;
• and
• a connecting portion disposed between the base layer and the first stacked unit and between the base layer and the second stacked unit, the connecting portion electrically connecting the first semiconductor layer and the second semiconductor layer, wherein
• an end portion of the first semiconductor layer is positioned between the connecting portion and the base layer.