High breakdown voltage metal-insulator-metal capacitor
AssigneeWin Semiconductors Corp.
InventorsChang-Hwang Hua, Winson Shao, Ben Hsu, Wen Chu
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Abstract
A high breakdown voltage metal-insulator-metal capacitor for compound semiconductor integrated circuit comprises a substrate, an isolation layer, a first metal layer, a dielectric layer, an adhesion layer and a second metal layer. The dielectric layer is formed by alternately stacking plural HfO2 layers and plural SiO2 layers. The thickness of each layer of the plural HfO2 layers is between 30 Å to 100 Å so as to reduce the leakage current, enhance the breakdown voltage and increase the capacitance density of each layer of the plural HfO2 layers. And the total thickness of the dielectric layer is thicker than 500 Å such that the breakdown voltage of the capacitor is higher than 50 V.
Claims18
A high breakdown voltage metal-insulator-metal (MIM) capacitor for compound semiconductor integrated circuit comprises:
- a substrate;
- an isolation layer formed on said substrate;
- a first metal layer formed on said isolation layer;
- a dielectric layer formed on said first metal layer, wherein said dielectric layer is formed by alternately stacking plural HfO2 layers and plural SiO2 layers;
- an adhesion layer formed on said dielectric layer;
- and
- a second metal layer formed on said adhesion layer;
- wherein the thickness of each layer of said plural HfO2 layers is between 30 Å to 100 Å so as to reduce the leakage current, enhance the breakdown voltage and increase the capacitance density of each layer of said plural HfO2 layers;
- and
- wherein the total thickness of said dielectric layer is thicker than 500 Å such that the breakdown voltage of said high breakdown voltage MIM capacitor is higher than 50V.
A high breakdown voltage metal-insulator-metal (MIM) capacitor for compound semiconductor integrated circuit comprises:
- a substrate;
- an isolation layer formed on said substrate;
- a first metal layer formed on said isolation layer;
- a dielectric layer formed on said first metal layer, wherein said dielectric layer is formed by alternately stacking plural HfO2 layers and plural alternate layers;
- an adhesion layer formed on said dielectric layer;
- and
- a second metal layer formed on said adhesion layer;
- wherein each of said plural alternate layers is a SiO2 layer or an Al2O3 layer;
- and said plural alternate layers include at least one said SiO2 layer and at least one said Al2O3 layer;
- wherein the thickness of each layer of said plural HfO2 layers is between 30 Å to 100 Å so as to reduce the leakage current, enhance the breakdown voltage and increase the capacitance density of each layer of said plural HfO2 layers;
- and
- wherein the total thickness of said dielectric layer is thicker than 500 Å such that the breakdown voltage of said high breakdown voltage MIM capacitor is higher than 50V.
A high breakdown voltage metal-insulator-metal (MIM) capacitor for compound semiconductor integrated circuit comprises:
- a substrate;
- an isolation layer formed on said substrate;
- a first metal layer formed on said isolation layer;
- a dielectric layer formed on said first metal layer, wherein said dielectric layer is formed by alternately stacking plural ZrO2 layers and plural alternate layers;
- an adhesion layer formed on said dielectric layer;
- and
- a second metal layer formed on said adhesion layer;
- wherein each of said plural alternate layers is a SiO2 layer or an Al2O3 layer;
- and said plural alternate layers include at least one said SiO2 layer;
- wherein the thickness of each layer of said plural ZrO2 layers is between 30 Å to 100 Å so as to reduce the leakage current, enhance the breakdown voltage and increase the capacitance density of each layer of said plural ZrO2 layers;
- and
- wherein the total thickness of said dielectric layer is thicker than 500 Å such that the breakdown voltage of said high breakdown voltage MIM capacitor is higher than 50V.
Dependencies are inferred from the claim text.