US 9,177,990 B2 · Method for forming impurity layer, exposure mask therefore and method for producing solid-state imaging device

Abstract

A method for forming an impurity layer, includes forming a resist material 16 on a surface portion of a semiconductor substrate 15; exposing the resist material using a grating mask 10 comprising a light transmission region 11 including a plurality of unit light transmission regions 14 being arranged two-dimensionally, each being composed of a plurality of minute partial sections 13A to 13D having different transmittance; forming a resist layer 18 on the surface of the semiconductor substrate 15 by developing the exposed resist material, the resist layer including a thin film region 17 having a film thickness corresponding to the transmittance of the light transmission region; implanting ions to the semiconductor substrate 15 via the thin film region; and diffusing ion groups 21A′, 21B′, 21C′, and 21D′ that are implanted at the same depth such that the ion groups are coupled in a lateral direction.

Claims26

Dependent claims

A method for forming an impurity layer comprising:

forming a photosensitive resist material on a substrate;
exposing the resist material using an exposure mask in which a plurality of unit light transmission regions is arranged two-dimensionally, each unit light transmission region being composed of a plurality of partial regions having different transmittance between adjacent regions;
forming a resist layer in which a film thickness is made partially different according to the transmittance of the exposure mask by developing the exposed resist material;
implanting ions to the substrate via the resist layer;
and
diffusing ion groups that are implanted at a substantially same depth in the substrate such that the ion groups are coupled in a lateral direction.

3 more elements

A method for producing a solid-state imaging device comprising:

arranging a plurality of photoelectric conversion sections in a matrix form on a surface of a base layer formed on a surface of a semiconductor substrate;
forming a photosensitive resist material on a surface of the base layer including the photoelectric conversion sections;
positioning an exposure mask composed of a plurality of non-light transmission regions arranged in a matrix form and light transmission regions arranged between the non-light transmission regions such that each of the non-light transmission regions of the exposure mask is positioned above the plurality of photoelectric conversion sections, wherein each of the light transmission regions includes a plurality of unit light transmission regions being arranged two-dimensionally, each unit light transmission region being composed of a plurality of partial regions having different transmittance between adjacent regions;
exposing the resist material using the exposure mask;
forming a resist layer in which a film thickness is made partially different according to the transmittance of the exposure mask by developing the exposed resist material;
implanting ions to intervals between the adjacent photoelectric conversion sections in the base layer via the resist layer;
and
forming a pixel isolation layer by diffusing ion groups that are implanted at a substantially same depth in the base layer such that the ion groups are coupled in a lateral direction.

5 more elements

A method for producing a solid-state imaging device comprising:

forming a photosensitive resist material on a surface of a semiconductor substrate;
exposing the resist material using an exposure mask composed of a light transmission region and a non-light transmission region surrounding the light transmission region, the light transmission region including a plurality of unit light transmission regions being arranged two-dimensionally, and each unit light transmission region being composed of a plurality of partial regions having different transmittance between adjacent regions;
forming a resist layer in which a film thickness is made partially different according to the transmittance of the exposure mask by developing the exposed resist material;
implanting ions to the semiconductor substrate via the resist layer;
forming a well layer by diffusing ion groups that are implanted at a substantially same depth in the semiconductor substrate such that the ion groups are coupled in a lateral direction and regularized;
and
arranging a plurality of photoelectric conversion sections in a matrix form on a surface portion of the well layer.

4 more elements

Dependencies are inferred from the claim text.

Method for forming impurity layer, exposure mask therefore and method for producing solid-state imaging device

Life of this patent

Method for forming impurity layer, exposure mask therefore and method for producing solid-state imaging device

Life of this patent

Abstract

Claims26