Pattern formation method and block copolymer
AssigneeKabushiki Kaisha Toshiba
InventorsAtsushi Hieno, Hiroko Nakamura, Koji Asakawa
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Abstract
According to one embodiment, a pattern formation method includes: forming a block copolymer layer containing a polystyrene derivative and an acrylic having 6 or more carbon atoms on a side chain in an opening of a resist layer provided on an underlayer and having the opening; forming a first layer containing the polystyrene derivative and a second layer containing the acrylic in the opening by phase-separating the block copolymer layer; and removing the second layer.
Claims19
A pattern formation method comprising:
- forming a block copolymer layer in an opening of a resist layer provided on an underlayer, the underlayer includes a third layer containing a silicon compound, a film to be processed provided under the third layer, and an organic film between the third layer and the film to be processed, the block copolymer layer containing a polystyrene derivative and an acrylic, and the acrylic having 6 or more carbon atoms on a side chain;
- forming a first layer containing the polystyrene derivative and a second layer containing the acrylic in the opening by phase-separating the block copolymer layer;
- removing the second layer;
- etching the third layer by using the resist layer and the first layer as a mask;
- and
- etching the organic film by using the third layer as a mask.
A block copolymer used for a block copolymer layer for a pattern formation method,
- the method including forming the block copolymer layer in an opening of a resist layer provided on an underlayer, the underlayer including a third layer containing a silicon compound, a film to be processed provided under the third layer, and an organic film between the third layer and the film to be processed, the block copolymer layer containing a polystyrene derivative and an acrylic, and the acrylic having 6 or more carbon atoms on a side chain, forming a first layer containing the polystyrene derivative and a second layer containing the acrylic in the opening by phase-separating the block copolymer layer, removing the second layer, etching the third layer by using the resist layer and the first layer as a mask, and etching the organic film by using the third layer as a mask.
A pattern formation method comprising:
- forming a block copolymer layer in an opening of a resist layer provided on an underlayer, the block copolymer layer containing a polystyrene derivative and an acrylic;
- forming a first layer containing the polystyrene derivative and a second layer containing the acrylic in the opening by phase-separating the block copolymer layer;
- removing the second layer,
- the acrylic being one of poly(n-heptyl methacrylate), poly(n-octyl methacrylate), poly(n-nonyl methacrylate), poly(n-decyl methacrylate), poly(n-undecyl methacrylate), poly(lauryl methacrylate) (PnLMA), poly(octadecyl methacrylate) (PnOMA), poly(n-heptyl acrylate), poly(n-octyl acrylate), poly(n-nonyl acrylate), poly(n-decyl acrylate), poly(n-undecyl acrylate), poly(lauryl acrylate), and poly(n-octadecyl acrylate).
Dependencies are inferred from the claim text.