Methods for chemical mechanical planarization of patterned wafers

A method of processing a substrate having a silicon oxide layer and a plurality of recesses disposed within the silicon oxide layer, comprising:

• depositing a germanium-containing material into the plurality of recesses to predominantly fill the plurality of recesses with the germanium-containing material to a first level below a first surface of the silicon oxide layer;
• depositing a silicon-containing material into the plurality of recesses and atop the germanium-containing material to fill the plurality of recesses and to form a layer atop the silicon oxide layer;
• and
• planarizing the silicon-containing material using a first slurry in a chemical mechanical polishing tool;
• wherein the first slurry selectively terminates planarization upon reaching the silicon oxide layer;
• and
• planarizinq the substrate using a second slurry in the chemical mechanical polishing tool until the first level is reached, wherein the second slurry is different than the first slurry.

A method of processing a substrate having a silicon oxide layer and a plurality of recesses disposed within the silicon oxide layer, comprising:

• depositing a germanium-containing material into the plurality of recesses to predominantly fill the plurality of recesses with the germanium-containing material;
• depositing a silicon-containing material into the plurality of recesses and atop the germanium-containing material to fill the plurality of recesses and to form a layer atop the silicon oxide layer;
• planarizing the silicon-containing material using a first slurry in a chemical mechanical polishing tool;
• wherein the first slurry selectively terminates planarization upon reaching the silicon oxide layer;
• and
• planarizing the silicon-containing material within the plurality of recesses and the silicon oxide layer using a second slurry;
• wherein the selectivity ratio between the silicon-containing material and the silicon oxide layer is 1:1.