Method for manufacturing a nitride semiconductor substrate
AssigneeSciocs Company Limited
InventorHajime Fujikura
Life of this patent
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Abstract
The invention provides a method for manufacturing a nitride semiconductor substrate capable of reducing a cleavage during slicing of the nitride semiconductor single crystal and capable of improving a yield rate of the nitride semiconductor substrate. The method includes growing a nitride semiconductor single crystal on a seed crystal substrate by vapor phase epitaxy; grinding an outer peripheral surface the grown nitride semiconductor single crystal; and slicing the nitride semiconductor single crystal with its outer peripheral surface ground. A grinding amount of the outer peripheral surface of the nitride semiconductor single crystal in the step of grinding is 1.5 mm or more.
Claims19
A method for manufacturing a nitride semiconductor substrate, comprising:
- growing a nitride semiconductor single crystal on a seed crystal substrate made of a nitride semiconductor single crystal by vapor phase epitaxy;
- grinding a single crystal outer peripheral surface of the grown nitride semiconductor single crystal;
- and
- slicing the grown nitride semiconductor single crystal with its outer peripheral surface ground,
- wherein, after the grinding step, the single crystal outer peripheral surface has a surface roughness RMS of 3 μm or less and wherein a grinding amount of the single crystal outer peripheral surface of the grown nitride semiconductor single crystal is 1.5 mm or more to increase slice yield in the step of slicing.
A method for manufacturing a nitride semiconductor substrate, comprising:
- growing a nitride semiconductor single crystal on a seed crystal substrate by vapor phase epitaxy;
- grinding a single crystal outer peripheral surface of the grown nitride semiconductor single crystal;
- and
- slicing the nitride semiconductor single crystal with its outer peripheral surface ground, wherein a grinding amount of the single crystal outer peripheral surface of the grown nitride semiconductor single crystal is 1.5 mm or more, and
- wherein, after the grinding step, the single crystal outer peripheral surface has a surface roughness RMS of 3 μm or less.
A method for manufacturing a nitride semiconductor substrate, comprising:
- growing a nitride semiconductor single crystal on a seed crystal substrate by vapor phase epitaxy;
- the nitride semiconductor single crystal grown formed into a cylindrical shape and having a diameter of 36 mm or more;
- grinding a single crystal outer peripheral surface of the grown nitride semiconductor single crystal, wherein an entirety of the outer peripheral surface is ground;
- and
- slicing the nitride semiconductor single crystal with its outer peripheral surface ground, wherein a grinding amount of the single crystal outer peripheral surface of the grown nitride semiconductor single crystal is 1.5 mm or more, and
- wherein, after the grinding step, the single crystal outer peripheral surface has a surface roughness RMS of 3 μm or less.
Dependencies are inferred from the claim text.