Residue removal from singulated die sidewall

A method of dicing a semiconductor wafer comprising a plurality of integrated circuits, the method comprising:

• providing the semiconductor wafer having a mask disposed thereon, the mask comprising a layer covering and protecting the integrated circuits;
• patterning the mask with a laser scribing process to provide gaps in the mask, the gaps exposing regions of the semiconductor wafer between the integrated circuits;
• plasma etching the semiconductor wafer through the gaps in the mask to singulate the integrated circuits;
• and
• subsequent to plasma etching the semiconductor wafer, removing etch residue from sidewalls of the singulated integrated circuits, wherein removing the etch residue comprises using a plasma cleaning process selected from the group consisting of an O2 plasma cleaning process, an Ar/O2 plasma cleaning process, a forming gas (H2/N2) plasma cleaning process, an Ar/O2/SF6 plasma cleaning process, a CF4/SF6 plasma cleaning process, and a combination of two or more thereof.

A method of dicing a semiconductor wafer comprising a plurality of integrated circuits, the method comprising:

• providing the semiconductor wafer having a mask disposed thereon, the mask comprising a layer covering and protecting the integrated circuits, wherein gaps are provided in the mask, the gaps exposing regions of the semiconductor wafer between the integrated circuits;
• plasma etching the semiconductor wafer through the gaps in the mask to singulate the integrated circuits;
• and
• subsequent to plasma etching the semiconductor wafer, removing etch residue from sidewalls of the singulated integrated circuits, wherein removing the etch residue comprises using a plasma cleaning process selected from the group consisting of an O2 plasma cleaning process, an Ar/O2 plasma cleaning process, a forming gas (H2/N2) plasma cleaning process, an Ar/O2/SF6 plasma cleaning process, a CF4/SF6 plasma cleaning process, and a combination of two or more thereof.

A method of dicing a semiconductor wafer comprising a plurality of integrated circuits, the method comprising:

• providing the semiconductor wafer having a mask disposed thereon, the mask comprising a layer covering and protecting the integrated circuits, wherein gaps are provided in the mask, the gaps exposing regions of the semiconductor wafer between the integrated circuits;
• plasma etching the semiconductor wafer through the gaps in the mask to singulate the integrated circuits;
• and
• subsequent to plasma etching the semiconductor wafer, removing etch residue from sidewalls of the singulated integrated circuits, wherein removing the etch residue comprises using an O2 plasma cleaning process.

A method of dicing a semiconductor wafer comprising a plurality of integrated circuits, the method comprising:

• providing the semiconductor wafer having a mask disposed thereon, the mask comprising a layer covering and protecting the integrated circuits, wherein gaps are provided in the mask, the gaps exposing regions of the semiconductor wafer between the integrated circuits;
• plasma etching the semiconductor wafer through the gaps in the mask to singulate the integrated circuits;
• and
• subsequent to plasma etching the semiconductor wafer, removing etch residue from sidewalls of the singulated integrated circuits, wherein removing the etch residue comprises using a forming gas (H2/N2) plasma cleaning process.

A method of dicing a semiconductor wafer comprising a plurality of integrated circuits, the method comprising:

• providing the semiconductor wafer having a mask disposed thereon, the mask comprising a layer covering and protecting the integrated circuits, wherein gaps are provided in the mask, the gaps exposing regions of the semiconductor wafer between the integrated circuits;
• plasma etching the semiconductor wafer through the gaps in the mask to singulate the integrated circuits;
• and
• subsequent to plasma etching the semiconductor wafer, removing etch residue from sidewalls of the singulated integrated circuits, wherein removing the etch residue comprises using a CF4/SF6 plasma cleaning process.