Semiconductor device and method for producing a semiconductor device
AssigneeInfineon Technologies Austria AG
InventorsAnton Mauder, Giulliano Aloise
Life of this patent
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Abstract
A semiconductor device has a semiconductor body with a semiconductor device structure including at least a first electrode and a second electrode. Between the two electrodes, a drift region is arranged, the drift region including charge compensation zones and drift zones arranged substantially parallel to one another. At least one charge carrier storage region which is at least partially free of charge compensation zones is arranged in the semiconductor body.
Claims11
A method for producing a plurality of semiconductor device chips, comprising:
- applying an epitaxial layer to a semiconductor wafer, wherein the epitaxial layer is doped less highly than the semiconductor wafer and drift zones of the semiconductor device;
- anisotropic etching of column-shaped structures in the epitaxial layer;
- applying a material including a first conductivity type at least on the inner side of the etched structures;
- diffusing at least a part of the material including the first conductivity type into the surrounding semiconductor material;
- applying a material including a second conductivity type complementary to the first conductivity type at least on the inner side of the etched structures;
- diffusing at least a part of the material including the second conductivity type into the surrounding semiconductor material;
- filling the remaining etched structures;
- structuring the semiconductor wafer to produce semiconductor device chips with at least one charge carrier storage region and with at least one front-sided cell region and at least one anode region and with a drift region.
A method for producing a plurality of semiconductor device chips, comprising:
- applying an epitaxial layer in a multiple epitaxial process with at least two epitaxial processes to a semiconductor wafer, wherein the epitaxial layer partially includes a cell region with drift zones for charge carriers of a first conductivity type and substantially parallel charge compensation zones of a second conductivity type complementary to the first conductivity type, and forms an edge region adjacent to and laterally surrounding the cell region, the edge region with a charge carrier storage region free of charge compensation zones, the charge carrier storage region being doped less highly than the drift zones and less highly than the semiconductor wafer;
- structuring the semiconductor wafer to produce semiconductor device chips with at least the charge carrier storage region in the edge region of the semiconductor device chips and with at least one front-sided cell region and at least one anode region and with a drift region.
A method for producing a plurality of semiconductor device chips, comprising:
- producing a semiconductor body with a semiconductor device structure including a first electrode and a second electrode and at least one front-sided cell region and at least one anode region and a drift region for charge carriers between the first electrode and the second electrode, wherein the drift region includes charge compensation zones and drift zones arranged substantially parallel to one another;
- reducing the charge carrier lifetime in the semiconductor body at least in the region of the drift region to a charge carrier lifetime such that the ambipolar diffusion length lD of the charge carriers is adjusted by heavy metal diffusion to lD≦0.25·aLK relative to the distance aLK between two charge compensation zones at least in the charge compensation zones and in the drift zones.
Dependencies are inferred from the claim text.