Semiconductor device and method for manufacturing semiconductor device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsToshinari Sasaki, Shuhei Yokoyama, Takashi Hamochi, Shunpei Yamazaki
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Abstract
A highly reliable semiconductor device that includes a transistor including an oxide semiconductor is provided. In a semiconductor device which includes a bottom-gate transistor including an oxide semiconductor film, the spin density of the oxide semiconductor film is lower than or equal to 1×1018 spins/cm3, preferably lower than or equal to 1×1017 spins/cm3, further preferably lower than or equal to 1×1016 spins/cm3. The conductivity of the oxide semiconductor film is lower than or equal to 1×103 S/cm, preferably lower than or equal to 1×102 S/cm, further preferably lower than or equal to 1×101 S/cm.
Claims11
A semiconductor device comprising:
- a gate electrode layer;
- a gate insulating film over the gate electrode layer;
- an oxide semiconductor film over the gate insulating film;
- source and drain electrode layers over the oxide semiconductor film;
- and
- an oxide insulating film over the source and drain electrode layers, wherein the oxide insulating film is in contact with the oxide semiconductor film and contains nitrogen,
- wherein a spin density of the oxide semiconductor film is lower than or equal to 1×1018 spins/cm3.
A semiconductor device comprising:
- an oxide semiconductor film,
- wherein a spin density of the oxide semiconductor film is lower than or equal to 1×1018 spins/cm3.
Dependencies are inferred from the claim text.