Temperature control method of chemical vapor deposition device

A temperature control method of a chemical vapor deposition device, comprising a chamber, a susceptor rotatably placed within the chamber and configured to have wafers loaded on its upper surface, a gas supplier provided within the chamber and configured to spray gas toward the wafers, heaters provided within the susceptor and configured to heat the wafers, temperature sensors provided at an upper portion of the chamber and configured to measure a temperature at an upper surface of the susceptor, a motor configured to rotate the susceptor, an encoder configured to measure a rotating speed of the motor, a rotation recognition mark provided at a position where is integrally rotated along with the susceptor, and a rotation recognition sensor provided in the chamber in order to determine a rotation state of the susceptor and configured to detect the rotation recognition mark, the temperature control method comprising the steps of:

• (a) calculating a first temperature distribution of the susceptor by matching the measured values of the temperature sensors with the measured value of the encoder;
• (b) calculating a second temperature distribution of the susceptor by using the rotation recognition sensor and the temperature sensors;
• (c) adjusting the measured value of the encoder if an error exists by comparing the first temperature distribution with the second temperature distribution;
• and
• (d) controlling the heaters based on a third temperature distribution calculated using the adjusted measured value of the encoder.