Back to results
US 9,070,720 B2Granted
Tunnel field effect transistor device and method for making the device
AssigneesImec, Katholieke Universiteit Leuven, KU LEUVEN R&D
InventorsQuentin Smets, Anne S. Verhulst, Rita Rooyackers, Marc Heyns
Life of this patent
Estimating the term…
Abstract
A Tunnel Field Effect Transistor device (TFET) made of at least following layers: a highly doped drain layer, a highly doped source layer, a channel layer, a gate dielectric layer and a gate electrode layer, the gate dielectric layer extending along the source layer, and a highly doped pocket layer extending in between and along the gate dielectric layer and the source layer, characterized in that the pocket layer extends to between and along the source layer and the channel layer.
Claims24
A tunnel field effect transistor device made of at least following layers:
- a highly doped drain layer made of a drain semiconductor material;
- a highly doped source layer, oppositely doped with respect to the drain layer, made of a source semiconductor material;
- a channel layer made of a lowly doped or undoped channel semiconductor material situated in between the source and the drain layer;
- a gate structure comprising a gate dielectric layer and a gate electrode layer, the gate dielectric layer extending along the source layer and the gate electrode layer extending along the gate dielectric layer along a face of the gate dielectric layer opposing the face of the gate dielectric layer facing the source layer and not extending beyond the gate dielectric layer;
- and
- a highly doped, pocket layer extending in between and along the gate dielectric layer and the source layer, wherein the pocket layer extends between and along the source layer and the channel layer, and wherein the source layer, the pocket layer, the channel layer and the drain layer are substantially planar and positioned on top and along each other.
3 more elements
A tunnel field effect transistor device made of at least following layers:
- a highly doped drain layer made of a drain semiconductor material;
- a highly doped source layer, oppositely doped with respect to the drain layer, made of a source semiconductor material;
- a channel layer made of a lowly doped or undoped channel semiconductor material situated in between the source and the drain layer;
- a gate structure comprising a gate dielectric layer and a gate electrode layer, the gate dielectric layer extending along the source layer and the gate electrode layer extending along the gate dielectric layer along a face of the gate dielectric layer opposing the face of the gate dielectric layer facing the source layer and not extending beyond the gate dielectric layer;
- and
- a highly doped, pocket layer extending in between and along the gate dielectric layer and the source layer, wherein the pocket layer extends between and along the source layer and the channel layer, wherein an etch stop layer is present in between and along the channel layer and the pocket layer.
3 more elements
A tunnel field effect transistor device made of at least following layers:
- a highly doped drain layer made of a drain semiconductor material;
- a highly doped source layer, oppositely doped with respect to the drain layer, made of a source semiconductor material;
- a channel layer made of a lowly doped or undoped channel semiconductor material situated in between the source and the drain layer;
- a gate structure comprising a gate dielectric layer and a gate electrode layer, the gate dielectric layer extending along the source layer and the gate electrode layer extending along the gate dielectric layer along a face of the gate dielectric layer opposing the face of the gate dielectric layer facing the source layer and not extending beyond the gate dielectric layer;
- and
- a highly doped, pocket layer extending in between and along the gate dielectric layer and the source layer, wherein the pocket layer extends between and along the source layer and the channel layer, wherein a leakage stop layer is present in between and along the channel layer and the pocket layer.
3 more elements
A tunnel field effect transistor device made of at least following layers:
- a highly doped drain layer made of a drain semiconductor material;
- a highly doped source layer, oppositely doped with respect to the drain layer, made of a source semiconductor material;
- a channel layer made of a lowly doped or undoped channel semiconductor material situated in between the source and the drain layer;
- a gate structure comprising a gate dielectric layer and a gate electrode layer, the gate dielectric layer extending along the source layer and the gate electrode layer extending along the gate dielectric layer along a face of the gate dielectric layer opposing the face of the gate dielectric layer facing the source layer and not extending beyond the gate dielectric layer;
- and
- a highly doped, pocket layer extending in between and along the gate dielectric layer and the source layer, wherein the pocket layer extends between and along the source layer and the channel layer, wherein the drain semiconductor material has a doping level of 1016 cm−3 or higher, wherein the source semiconductor material has a doping level of 1016 cm−3 or higher, wherein the lowly doped channel semiconductor material has a doping level below 1018 cm−3, and wherein the semiconductor material of the pocket layer has a doping level of for example 1016 cm−3 or higher.
3 more elements
A tunnel field effect transistor device made of at least following layers:
- a highly doped drain layer made of a drain semiconductor material;
- a highly doped source layer, oppositely doped with respect to the drain layer, made of a source semiconductor material;
- a channel layer made of a lowly doped or undoped channel semiconductor material situated in between the source and the drain layer;
- a gate structure comprising a gate dielectric layer and a gate electrode layer, the gate dielectric layer extending along the source layer and the gate electrode layer extending along the gate dielectric layer along a face of the gate dielectric layer opposing the face of the gate dielectric layer facing the source layer and not extending beyond the gate dielectric layer;
- and
- a highly doped, pocket layer extending in between and along the gate dielectric layer and the source layer, wherein the pocket layer extends between and along the source layer and the channel layer, wherein the drain semiconductor material has a doping level of between 1017 cm−3 and 1020 cm−3, wherein the source semiconductor material has a doping level of between 5·1018 cm−3 and 1020 cm−3, and wherein the semiconductor material of the pocket layer has a doping level of between 1017 cm−3 and 1020 cm−3.
3 more elements
A tunnel field effect transistor device made of at least following layers:
- a highly doped drain layer made of a drain semiconductor material;
- a highly doped source layer, oppositely doped with respect to the drain layer, made of a source semiconductor material;
- a channel layer made of a lowly doped or undoped channel semiconductor material situated in between the source and the drain layer;
- a gate structure comprising a gate dielectric layer and a gate electrode layer, the gate dielectric layer extending along the source layer and the gate electrode layer extending along the gate dielectric layer along a face of the gate dielectric layer opposing the face of the gate dielectric layer facing the source layer and not extending beyond the gate dielectric layer;
- and
- a highly doped, pocket layer extending in between and along the gate dielectric layer and the source layer, wherein the pocket layer extends between and along the source layer and the channel layer, wherein the channel semiconductor material is undoped channel semiconductor material.
3 more elements
Dependencies are inferred from the claim text.