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US 9,070,707 B2Granted
Semiconductor device
AssigneeMitsubishi Electric Corporation
InventorAtsushi Hasuike
Life of this patent
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Abstract
A semiconductor device includes: a substrate; a semiconductor layer composed of GaN-based compound semiconductor on the substrate; a source electrode, a gate electrode, and a drain electrode on the substrate; and an additive substance added to the semiconductor layer. The additive substance serves as a luminescent center within the semiconductor layer. Charge trapped at an energy level in the semiconductor layer is released and recombined by light generated from the luminescent center.
Claims10
A semiconductor device comprising:
- a substrate;
- a semiconductor layer composed of a GaN-based compound semiconductor and that is supported by the substrate;
- a source electrode, a gate electrode, and a drain electrode on the semiconductor layer;
- and
- an additive substance contained within the semiconductor layer, wherein
- the additive substance produces luminescent light within the semiconductor layer in response to electrical current flow within the semiconductor layer, and
- electrical charge trapped at an energy level within the semiconductor layer is released and recombined in response to the luminescent light produced by the additive substance.
4 more elements
A semiconductor device comprising:
- a substrate;
- a semiconductor layer composed of a GaN-based compound semiconductor and that is supported by the substrate;
- a source electrode, a gate electrode, and a drain electrode on the semiconductor layer;
- and
- atoms of a rare earth element contained within the semiconductor layer, wherein
- the atoms of the rare earth element produce luminescent light within the semiconductor layer in response to electrical current flow within the semiconductor layer, and
- electrical charge trapped within the semiconductor layer is released and recombined in response to the luminescent light produced by the atoms of the rare earth element.
4 more elements
A semiconductor device comprising:
- a substrate;
- a first semiconductor layer composed of a first GaN-based compound semiconductor and that is supported by the substrate;
- a second semiconductor layer composed of a second GaN-based compound semiconductor material that is different in composition from the first GaN-based compound semiconductor and that is in contact with the first semiconductor layer;
- a source electrode, a gate electrode, and a drain electrode on the second semiconductor layer;
- and
- atoms of a rare earth element contained within the first and second semiconductor layers, wherein
- the atoms of the rare earth element produce luminescent light within the first and second semiconductor layers in response to electrical current flow within the first and second semiconductor layers,
- electrical charge trapped within the first and second semiconductor layers is released and recombined in response to the luminescent light produced by the atoms of the rare earth element, and
- the semiconductor device is a high electron mobility field effect transistor.
6 more elements
Dependencies are inferred from the claim text.