Micromachined structures
AssigneePixart Imaging Inc.
InventorsChuanwei Wang, Ming Han Tsai, Chih Ming Sun, Weileun Fang
Life of this patent
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Abstract
A micromachined structure includes a substrate and a suspended structure. The substrate has a cavity formed thereon. The suspended structure is formed on the cavity of the substrate. The suspended structure includes a first metal layer, a second metal layer, and a first dielectric layer positioned between the first and second metal layers, wherein the first dielectric layer has a first opening in communication with the cavity through an opening formed in the first metal layer.
Claims18
A micromachined structure, comprising:
- a substrate having a cavity formed thereon, wherein the substrate defines a horizontal direction parallel to a surface thereof;
- and
- a suspended structure formed on the cavity of the substrate, the suspended structure comprising
- a first metal layer,
- a second metal layer,
- a first dielectric layer positioned between the first and second metal layers,
- a second dielectric layer disposed on the second metal layer,
- a third metal layer disposed on the second dielectric layer, and
- a third dielectric layer disposed on the third metal layer,
- wherein
- the first dielectric layer has a first opening in communication with the cavity through an opening formed in the first metal layer,
- the second dielectric layer has a second opening in communication with the first opening through an opening formed in the second metal layer,
- the third dielectric layer has a third opening in communication with the second opening through an opening formed in the third metal layer, and
- the second opening has a second width in the horizontal direction, the third opening has a third width in the horizontal direction, and the second width is greater than the third width.
A micromachined structure, comprising:
- a substrate having a cavity formed thereon, wherein the substrate defines a horizontal direction parallel to a surface thereof;
- and
- a circuitry layer formed on the cavity of the substrate, the circuitry layer comprising a plurality of dielectric layers and a plurality of metal layers, wherein
- each dielectric layer of the plurality of dielectric layers is positioned between two adjacent metal layers of the plurality of metal layers, and
- each dielectric layer of the plurality of dielectric layers has an opening in communication with the cavity through at least one opening formed in the plurality of metal layers,
- wherein
- the plurality of the dielectric layers at least comprises first, second and third dielectric layers,
- the second dielectric layer is positioned between the first and third dielectric layers, and
- the opening of the second dielectric layer has a width that is greater than widths of the openings of the first and third dielectric layers in the horizontal direction.
A micromachined structure, comprising:
- a substrate having a cavity formed thereon, wherein the substrate defines a horizontal direction parallel to a surface thereof and a vertical direction perpendicular to the horizontal direction;
- and
- a suspended structure formed on the cavity of the substrate, the suspended structure comprising
- a first metal layer,
- a second metal layer,
- a first dielectric layer positioned between the first and second metal layers,
- a second dielectric layer disposed on the second metal layer,
- a third metal layer disposed on the second dielectric layer, and
- a third dielectric layer disposed on the third metal layer,
- wherein
- the first dielectric layer has a first opening in communication with the cavity through an opening formed in the first metal layer, the first opening having a first width in the horizontal direction,
- the second dielectric layer has a second opening in communication with the first opening through an opening formed in the second metal layer, the second opening having a second width in the horizontal direction,
- the third dielectric layer has a third opening in communication with the second opening through an opening formed in the third metal layer, and
- the third opening is free of overlapping with the first opening in the vertical direction.
Dependencies are inferred from the claim text.