Integrated circuit power grid with improved routing resources and bypass capacitance

A power grid for an integrated circuit, comprising:

• a plurality of thin metal layers having a plurality of metal traces, wherein a plurality of said metal traces on different thin metal layers are connected by at least one via, wherein said at least one via is substantially surrounded by a metal trace on at least one thin metal level connected to a different power supply voltage than a power supply of one or more additional thin metal levels.

An integrated circuit comprising:

• a power grid comprising a plurality of thick metal layers having a plurality of metal traces and at least one thin metal layer, wherein the plurality of thick metal layers having the plurality of metal traces are configured to route power supplies, wherein at least one of said thick metal layers has a lower pitch than a pitch on another thick metal layer of the plurality of thick metal layers, and wherein said lower pitch increases one or more of a bypass capacitance of said power grid and a number of transitions between at least two power supply levels in a given area.

An integrated circuit comprising:

• a power grid comprising a plurality of thin metal layers having a plurality of metal traces, wherein a plurality of said metal traces on different thin metal layers are connected by at least one via, wherein said at least one via is substantially surrounded by a metal trace on at least one thin metal level connected to a different power supply voltage than a power supply of one or more additional thin metal levels.