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US 9,070,583 B2Granted
Semiconductor device and method of fabricating the same
AssigneeHynix Semiconductor Inc.
InventorChang Youn Hwang
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Abstract
Provided are a semiconductor device and a method of fabricating the semiconductor memory device. A contact plug is formed by wet etching. An aspect ratio of SAC is decreased and SAC fail is reduced so that a process margin is secured. The semiconductor device includes a semiconductor substrate comprising an active region and a device isolation layer defining the active region, a conductive pattern formed on the semiconductor substrate, and a nitride layer formed on the semiconductor substrate perpendicularly to the conductive pattern.
Claims10
A semiconductor device comprising:
- a substrate having active regions, each of the active regions including first and second conductive regions;
- conductive line patterns disposed over the substrate, each conductive line pattern passing between the first and the second conductive regions;
- nitride patterns disposed between the conductive line patterns and arranged in a line shape;
- and
- a contact plug provided in a region defined by the conductive line patterns and the nitride patterns, the contact plug coupled to any of the first and second conductive regions,
- wherein the nitride patterns are disposed perpendicular to the conductive line patterns.
3 more elements
Dependencies are inferred from the claim text.