Substrate processing apparatus and substrate processing method
AssigneeTokyo Electron Limited
InventorsHiroshi Tanaka, Toshiyuki Shiokawa, Takao Inada
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AssigneeTokyo Electron Limited
InventorsHiroshi Tanaka, Toshiyuki Shiokawa, Takao Inada
Estimating the term…
A drying gas is supplied into a drying chamber in a substantially horizontal direction, an obliquely downward direction descendent from the substantially horizontal direction, or a vertically downward direction under a state where a wafer is immersed in a cleaning liquid in a cleaning tank. The wafer is moved from the cleaning tank into the drying chamber, with the drying gas being supplied into the drying chamber. At this time, the supply of the drying gas into the drying chamber is stopped, under a condition where a part of the wafer is immersed in the cleaning liquid stored in the cleaning tank. After the movement of the wafer into the drying chamber has been finished, a drying gas is supplied into the drying chamber in an obliquely upward direction ascendant from the substantially horizontal direction or a vertically upward direction.
A substrate processing apparatus comprising:
A substrate processing method for a substrate to be processed, with the use of a substrate processing apparatus comprising a cleaning tank configured to store a cleaning liquid for a substrate to be processed and a drying chamber disposed above the cleaning tank, the substrate processing method comprising:
Dependencies are inferred from the claim text.