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US 9,069,253 B2Granted
Mask structure
AssigneeNanya Technology Corporation
InventorsYu-Mei Ni, Chun-Yen Huang, Pei-Cheng Fan
Life of this patent
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Abstract
A mask structure, including a substrate; an absorber layer formed on the substrate; and a patterned reflection layer formed on the absorber layer. Optionally, the mask structure may further include a buffer layer, a conductive coating, or combinations thereof. The buffer layer may be formed between the absorber layer and the reflection layer, and the conductive coating may be formed at a back side of the substrate.
Claims8
A mask structure, comprising:
- a substrate;
- an absorber layer formed on the substrate;
- and
- a patterned reflection layer formed on the absorber layer and located at a top of the mask structure, wherein the patterned reflection layer is a multilayer stack having alternative layers of a relatively high refractive index material and a relatively low refractive index material, and is configured to reflect an EUV light.
1 more element
Dependencies are inferred from the claim text.