Calibration of lithographic apparatus by exposing patterns on substrate positioned at different orientations

A method comprising:

• performing a plurality of exposures to form a plurality of patterns on a substrate, the substrate being positioned at a different orientation during each exposure of the plurality of exposures to form a corresponding pattern of the plurality of patterns;
• measuring an overlay error between a first pattern and a second pattern of the plurality of patterns, the first pattern being exposed at a first substrate orientation and the second pattern being exposed at a second substrate orientation, the first and second substrate orientations being different from each other;
• determining, based on the measured overlay error, a model representative of a relationship between the overlay error and a system parameter error, wherein the model comprises a polynomial function;
• and
• deriving a calibration correction factor from the model.

A lithographic apparatus comprising:

• an illuminator configured to perform a plurality of exposures to form a plurality of patterns on a substrate, the substrate being positioned at a different orientation during each exposure of the plurality of exposures to form a corresponding pattern of the plurality of patterns;
• a measurement device configured to measure an overlay error between a first pattern and a second pattern of the plurality of patterns, the first pattern being exposed at a first substrate orientation and the second pattern being exposed at a second substrate orientation, the first and second substrate orientations being different from each other;
• and
• a processing device configured to determine, based on the measured overlay error, a model representative of a relationship between the overlay error and a system parameter error, wherein the model comprises a polynomial function.

A lithographic apparatus comprising:

• an illuminator configured to perform a plurality of exposures to form a plurality of patterns on a substrate, the substrate being positioned at a different orientation during each exposure of the plurality of exposures to form a corresponding pattern of the plurality of patterns;
• a measuring device configured to measure an overlay error between a first pattern and a second pattern of the plurality of patterns, the first pattern being exposed at a first substrate orientation and the second pattern being exposed at a second substrate orientation, the first and second substrate orientations being different from each other;
• and
• a processing device configured to:
• determine, based on the measured overlay error, a model representative of a relationship between the overlay error and a system parameter error, wherein the model comprises a polynomial function;
• and
• derive a calibration correction factor from the model.

A non-transitory computer-readable medium having computer program logic recorded thereon, execution of which, by a computing device, causes the computing device to perform operations comprising:

• performing a plurality of exposures to form a plurality of patterns on a substrate, the substrate being positioned at a different orientation during each exposure of the plurality of exposures to form a corresponding pattern of the plurality of patterns;
• measuring an overlay error between a first pattern and a second pattern of the plurality of patterns, the first pattern being exposed at a first substrate orientation and the second pattern being exposed at a second substrate orientation, the first and second substrate orientations being different from each other;
• and
• determining, based on the measured overlay error, a model representative of a relationship between the overlay error and a system parameter error, wherein the model comprises a polynomial function.

A non-transitory computer-readable medium having computer program logic recorded thereon, execution of which, by a computing device, causes the computing device to perform operations comprising:

• performing a plurality of exposures to form a plurality of patterns on a substrate, the substrate being positioned at a different orientation during each exposure of the plurality of exposures to form a corresponding pattern of the plurality of patterns;
• measuring an overlay error between a first pattern and a second pattern of the plurality of patterns, the first pattern being exposed at a first substrate orientation and the second pattern being exposed at a second substrate orientation, the first and second substrate orientations being different from each other;
• determining, based on the measured overlay error, a model representative of a relationship between the overlay error and a system parameter error, wherein the model comprises a polynomial function;
• and
• deriving a calibration correction factor from the model.