Back to results
US 9,041,065 B2Granted
Semiconductor heterostructure diodes
AssigneeTransphorm Inc.
InventorsYifeng Wu, Umesh Mishra, Primit Parikh, Rongming Chu, Ilan Ben-Yaacov, Likun Shen
Life of this patent
Estimating the term…
Abstract
Planar Schottky diodes for which the semiconductor material includes a heterojunction which induces a 2DEG in at least one of the semiconductor layers. A metal anode contact is on top of the upper semiconductor layer and forms a Schottky contact with that layer. A metal cathode contact is connected to the 2DEG, forming an ohmic contact with the layer containing the 2DEG.
Claims32
A diode, comprising:
- a semiconductor material comprising a first III-N material layer and a second III-N material layer, wherein a 2DEG channel is in the first III-N material layer because of a compositional difference between the first III-N material layer and the second III-N material layer;
- a first insulator layer on the semiconductor material;
- and
- a first terminal and a second terminal, wherein the first terminal comprises an anode that forms a Schottky contact with the semiconductor material and includes an extending portion that extends over the first insulator layer, and a second terminal is a single cathode in ohmic contact with the 2DEG channel.
1 more element
A diode, comprising:
- a semiconductor material comprising a first III-N material layer and a second III-N material layer, wherein a 2DEG channel is in the first III-N material layer because of a compositional difference between the first III-N material layer and the second III-N material layer;
- a first insulator layer on the semiconductor material;
- a second insulator layer on the first insulator layer;
- and
- a first terminal and a second terminal, wherein the first terminal comprises an anode that forms a Schottky contact with the semiconductor material and includes an extending portion that extends over the second insulator layer, and a second terminal is a single cathode in ohmic contact with the 2DEG channel.
2 more elements
A diode, comprising:
- a second III-N material layer on a first III-N material layer;
- a 2DEG channel in the first III-N material layer;
- a first insulator layer over the second III-N material layer;
- and
- a first terminal and a second terminal, the first terminal comprising an anode that includes a field plate, and a second terminal is a single cathode in ohmic contact with the 2DEG channel;
- wherein
- when the diode is forward biased, current flows from the anode to the cathode predominantly through a Schottky barrier and through the 2DEG channel.
4 more elements
Dependencies are inferred from the claim text.