High voltage GaN transistor

A transistor device, comprising:

• an active region;
• source and drain electrodes in electrical contact with said active region;
• a gate electrode comprising a gate length, said gate electrode between said source and drain electrodes and in electrical contact with said active region;
• a plurality of field plates on said active region, wherein a first of said field plates is integral with said gate electrode and extends toward said source electrode a distance equal to or longer than said gate length and a second of said field plates is integral with said gate electrode extending toward said drain electrode, said first field plate extending a greater distance toward said source electrode than said second field plate extends toward said drain electrode without contacting said source electrode;
• and
• wherein said field plates are configured such that transistor exhibits a blocking voltage of at least 900 Volts while supporting a current of at least 2 Amps.

A transistor, comprising:

• an active region;
• source and drain electrodes in electrical contact with said active region;
• a gate electrode between said source and drain electrodes and in electrical contact with said active region;
• a plurality of field plates on said active region, a first and second of said field plates integral with said gate electrode and extending toward said source and drain electrodes respectively, wherein said first field plate is longer than said second field plate and does not contact said source electrode;
• and
• an outermost field plate of said plurality of field plates that is farthest from said gate electrode is electrically connected to said source electrode.