High electron mobility transistors and methods of manufacturing the same

A high electron mobility transistor (HEMT), comprising:

• a channel layer;
• a channel supplying layer configured to induce a 2-dimensional electron gas (2DEG) channel in the channel layer;
• a source electrode, a gate electrode and a drain electrode on the channel layer and the channel supplying layer;
• at least one of a channel increasing layer and an insulating layer on the channel supplying layer, the channel increasing layer increasing a concentration of the 2DEG;
• an oxygenated region adjacent to the gate electrode,
• the oxygenated region including an oxidized product of a material of the channel supplying layer,
• the oxygenated region including one of,
• an oxidized product of a material of the channel increasing layer, and
• an oxidized product of a material of the insulating layer;
• and
• a semiconductor layer of less polarizability than a polarizability of the channel supplying layer, the semiconductor layer between the channel supplying layer and the at least one of the channel increasing layer and the insulating layer,
• wherein at least part of the oxygenated region includes a part of both the at least one of the channel increasing layer and the insulating layer and the semiconductor layer.

A high electron mobility transistor (HEMT), comprising:

• a channel layer;
• a channel supplying layer configured to induce a 2-dimensional electron gas (2DEG) channel in the channel layer;
• a source electrode, a gate electrode and a drain electrode on the channel layer and the channel supplying layer;
• at least one of a channel increasing layer and an insulating layer on the channel supplying layer, the channel increasing layer increasing a concentration of the 2DEG;
• an oxygenated region adjacent to the gate electrode,
• the oxygenated region including an oxidized product of a material of the channel supplying layer,
• the oxygenated region including one of,
• an oxidized product of a material of the channel increasing layer, and
• an oxidized product of a material of the insulating layer;
• and
• a semiconductor layer of greater polarizability than a polarizability of the channel layer, the channel layer between the semiconductor layer and the gate electrode.

A method of manufacturing a high electron mobility transistor (HEMT), the method comprising:

• forming a channel layer on a substrate;
• forming a channel supplying layer on the channel layer to induce a 2-dimensional electron gas (2DEG) channel in the channel layer;
• forming a source electrode and a drain electrode on the channel supplying layer, the source and drain electrodes spaced apart from each other;
• forming an oxygenated region on the channel supplying layer between the source electrode and the drain electrode, the forming an oxygenated region including oxidizing a part of the channel supplying layer;
• and
• forming a gate electrode on at least one of the oxygenated region and a region of the channel supplying layer between the oxygenated region and the source electrode,
• wherein the forming of the oxygenated region includes forming a first oxygenated region and a second oxygenated region,
• the first oxygenated region is between the gate electrode and the channel layer,
• the second oxygenated region is between the drain electrode and the gate electrode, and
• the second oxygenated region is not in contact with the drain electrode.