Semiconductor structure for antenna switching circuit
AssigneeMaxtek Technology Co., Ltd.
InventorsKe-Kung Liao, Tung-Sheng Chang, Chun-Yen Ku, Shih-Yu Chen
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Abstract
A manufacturing method for antenna switching circuit includes the following steps of: providing a GaAs wafer, which includes a capping layer; disposing an isolation layer to the GaAs wafer for forming a device area; and disposing a gate metal on the capping layer within the device area, wherein an interface between the gate metal and the capping layer forms a Schottky contact, and the Schottky contact is parallel connected with an impedance. The present invention also discloses a semiconductor structure for antenna switching circuit.
Claims5
A semiconductor structure for an antenna switching circuit, comprising:
- a buffer layer;
- a channel layer disposed on the channel layer;
- a space layer disposed on the channel layer;
- a donor layer disposed on the space layer;
- a capping layer disposed on the donor layer;
- an isolation layer disposed on the buffer layer, and adjoining the channel layer, the space layer, the donor layer and the capping layer to form a device area;
- a gate metal disposed to the capping layer within the device area, wherein the gate metal and the capping layer have an interface;
- a first ohmic layer disposed on the capping layer and contacted to the gate metal;
- and
- a first metal layer disposed on the first ohmic layer and the gate metal.
Dependencies are inferred from the claim text.