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US 9,041,058 B2Granted
Metal oxide semiconductor having epitaxial source drain regions and method of manufacturing same using dummy gate process
AssigneeSony Corporation
InventorYasushi Tateshita
Life of this patent
Estimating the term…
Abstract
A method of manufacturing a transistor by which sufficient stress can be applied to a channel region within allowable ranges of concentrations of Ge and C in a mixed crystal layer. A semiconductor device is also provided.
Claims12
A semiconductor device comprising:
- a silicon substrate;
- a gate electrode over the silicon substrate;
- a gate insulating film composed of a metal oxide, a metal silicate, a metal oxynitride, or a nitrided metal silicate each including a metal selected from the group consisting of hafnium, lanthanum, aluminum, zirconium, and tantalum, the gate insulating film being only between the gate electrode and the silicon substrate;
- as viewed in cross section, a sidewall film on both of oppositely facing sides of the gate electrode;
- as viewed in the cross section, an offset spacer between the sidewall film and the gate electrode;
- a mixed crystal layer in a recess region of a surface of the silicon substrate on both sides of the sidewall film and composed of silicon and an atom having a lattice constant different from a lattice constant of silicon;
- as viewed in the cross section, a shallow-junction extension region on the silicon substrate and extending from the mixed crystal layer to a channel region underneath the gate electrode;
- and
- an insulating film covering the sidewall film and the silicon substrate but not above the gate electrode.
6 more elements
A semiconductor device comprising:
- a silicon substrate;
- a gate electrode over the silicon substrate;
- a gate insulating film composed of a metal oxide, a metal silicate, a metal oxynitride, or a nitride metal silicate each including a metal selected from the group consisting of hafnium, lanthanum, aluminum, zirconium, and tantalum, the gate insulating film being only between the gate electrode and the silicon substrate;
- as viewed in cross section, a sidewall film at both oppositely facing sides of the gate electrode;
- as viewed in the cross section, an offset spacer between the sidewall film and the gate electrode;
- a mixed crystal layer in a recess region in a surface of the silicon substrate on both sides of the sidewall film and composed of silicon and an atom having a lattice constant different from a lattice constant of silicon;
- an insulating film covering the sidewall film and the silicon substrate but not above the gate electrode;
- and
- a work function control metal between the gate electrode and the gate insulating film.
6 more elements
A semiconductor device comprising:
- a silicon substrate;
- a gate electrode over the silicon substrate;
- a gate insulating film composed of a metal oxide, a metal silicate, a metal oxynitride, or a nitrided metal silicate each including a metal selected from the group consisting of hafnium, lanthanum, aluminum, zirconium, and tantalum, the gate insulating film only between the gate electrode and the silicon substrate;
- as viewed in cross section, a sidewall film at both oppositely facing sides of the gate electrode;
- as viewed in the cross section, an offset spacer between the sidewall film and the gate electrode;
- a mixed crystal layer in a recess region in a surface of the silicon substrate on both sides of the sidewall film and composed of silicon and an atom having a lattice constant different from a lattice constant of silicon:
- an insulating film covering the sidewall film and the silicon substrate but not above the gate electrode;
- and
- an adhesion layer between the gate electrode and the gate insulating film.
6 more elements
Dependencies are inferred from the claim text.