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US 9,041,048 B2Granted
Semiconductor light emitting device
AssigneeLG Innotek Co., Ltd.
InventorHo Sang Yoon
Life of this patent
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Abstract
The semiconductor light emitting device according to embodiments has a first conductive type semiconductor layer, an un-doped semiconductor layer under the first conductive type semiconductor layer, and a plurality of semiconductor structures in the un-doped semiconductor layer.
Claims16
A semiconductor light emitting device, comprising:
- a first conductive type semiconductor layer;
- a second conductive type semiconductor layer disposed on a top surface of the first conductive type semiconductor layer;
- an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer;
- a first un-doped semiconductor layer under a bottom surface of the first conductive type semiconductor layer;
- a second un-doped semiconductor layer disposed between the first conductive type semiconductor layer and the first un-doped semiconductor layer;
- and
- a diffusion semiconductor structure comprising a first diffusion semiconductor structure and a second diffusion semiconductor structure in the first un-doped semiconductor layer,
- wherein the first diffusion semiconductor structure is spaced from the second diffusion semiconductor structure,
- wherein a first portion of the first un-doped semiconductor layer is disposed between a bottom surface of the diffusion semiconductor structure and a bottom surface of the first un-doped semiconductor layer,
- wherein a second portion of the first un-doped semiconductor layer is connected with the first portion of the first un-doped semiconductor layer and is disposed between the first diffusion semiconductor structure and the second diffusion semiconductor structure,
- wherein a top surface of the diffusion semiconductor structure and a top surface of the second portion of the first un-doped semiconductor layer are in contact with a bottom surface of the second un-doped semiconductor layer, and
- wherein the first un-doped semiconductor layer is formed of a single layer having the first and second portions.
9 more elements
A semiconductor light emitting device, comprising:
- a substrate;
- a first un-doped semiconductor layer on the substrate,
- wherein a plurality of recessed portions are provided on a top surface of the first un-doped semiconductor layer, wherein each of the plurality of recess portions are spaced from each other by a predetermined gap, and wherein a thickness of the first un-doped semiconductor layer is greater than a thickness of the recessed portions;
- a plurality of diffusion semiconductor structures in the recessed portions of the first un-doped semiconductor layer;
- a second un-doped semiconductor layer on the top surface of the first un-doped semiconductor layer and a top surface of the plurality of diffusion semiconductor structures;
- and
- a light emitting structure comprising a plurality of compound semiconductor layers disposed on a top surface of the second un-doped semiconductor layer,
- wherein the light emitting structure comprises a first conductive type semiconductor layer, a second conductive type semiconductor layer disposed on a top surface of the first conductive type semiconductor layer, and an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer,
- wherein the first un-doped semiconductor layer is formed of a single layer and has a thickness greater than a thickness of the plurality of diffusion semiconductor structures, and
- wherein the plurality of diffusion semiconductor structures do not directly contact each other.
7 more elements
Dependencies are inferred from the claim text.