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US 9,041,045 B2Granted
Transparent LED wafer module and method for manufacturing same
OwnerSung-Bok Shininventor
Life of this patent
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Abstract
A transparent LED wafer module and a method for manufacturing the same are provided. In a conductor LED device epitaxial process, the conductor LED device is grown on a transparent material wafer, where both surfaces of the conductor LED device are entirely grown on the transparent material, and then a transparent glass substrate is restacked, thereby securing a high amount of light.
Claims4
A transparent LED wafer module comprising:
- a lower transparent substrate having translucency;
- a lower transparent electrode coated on the lower transparent substrate, to which power is applied;
- an n-electrode formed after a metal is deposited and etched, in which a lower portion of the n-electrode is received in the lower transparent electrode by a predetermined depth;
- an epitaxial layer comprising a plurality of layers, which is formed by etching after being deposited on the n-electrode, and emits light by application of power;
- a p-electrode formed by etching after a metal is deposited on a p-ohmic contact layer as an uppermost layer from among the plurality of layers constituting the epitaxial layer;
- a transparent nonconductor filled between the lower transparent electrode and an upper transparent electrode connected to the n-electrode and the p-electrode, respectively, which blocks positive and negative polarities occurring by power application;
- wherein the upper transparent electrode is layered on the transparent nonconductor and the p-electrode;
- and
- an upper transparent substrate having translucency, which is layered on the upper transparent electrode,
- wherein the epitaxial layer comprises:
- an AlGaInN <aluminum-gallium-indium-nitride> buffer formed by etching after being deposited on the lower transparent electrode, which is grown on one side of the n-electrode at the same height as that of an upper portion of the n-electrode;
- an n-AlGaInN layer layered on the n-electrode and the AlGaInN buffer;
- an AlGaInN active layer layered on the n-AlGaInN layer, which comprises a plurality of quantum wells, and emits light by power application;
- a p-AlGaInN clad layer layered on the AlGaInN active layer;
- and
- a p-ohmic contact layer layered on the p-AlGaInN clad layer.
13 more elements
A method for manufacturing a transparent LED wafer module, the method comprising the steps of:
- (a) coating a lower transparent electrode on a lower transparent substrate having translucency;
- (b) forming an n-electrode by depositing and etching a metal on the lower transparent electrode coated in step (a);
- (c) forming an epitaxial layer by being deposited and etched on then-electrode, the epitaxial layer comprising a plurality of layers, and emitting light by power application;
- (d) forming a p-electrode by depositing and etching a metal on a p-ohmic contact layer formed as an uppermost layer of the epitaxial layer;
- (e) filling a transparent nonconductor between the lower transparent electrode and an upper transparent electrode connected to the n-electrode and the p-electrode, respectively, formed in steps (b) and (d) in order to block positive and negative polarities occurring by power application;
- and
- (f) layering the upper transparent electrode on the p-electrode and the transparent nonconductor, and layering an upper transparent substrate on the upper transparent electrode,
- wherein the step (c) comprises the steps of:
- (c-1) growing an AlGaInN buffer by depositing and etching the AlGaInN buffer at one side of the n-electrode at the same height as that of an exposed upper portion of the n-electrode formed in the step (b);
- (c-2) layering an n-AlGaInN layer on the n-electrode and the AlGaInN buffer through a deposition and etching process, and layering an AlGaInN active layer on the n-AlGaInN layer, the AlGaInN active layer comprising a plurality of quantum wells, and emitting light by power application through the lower transparent electrode and the upper transparent electrode formed respectively in the steps (a) and (f);
- and
- (c-3) layering a p-AlGaInN clad layer on the AlGaInN active layer, and layering a p-ohmic contact layer.
9 more elements
Dependencies are inferred from the claim text.