Semiconductor light emitting device wherein a linear expansion coefficient of an intermediate layer is larger than a linear expansion coefficient of a first semiconductor layer and smaller than a linear expansion coefficient of a wavelength conversion layer

A semiconductor light emitting device comprising:

• a conductive first columnar unit extending in a first direction;
• a conductive second columnar unit provided apart from the first columnar unit in a second direction crossing the first direction and extending in the first direction;
• a wavelength conversion layer provided apart from the first columnar unit and the second columnar unit in the first direction;
• a light emitting unit including:
• a first semiconductor layer of a first conductivity type including:
• a first semiconductor portion provided between at least part of the first columnar unit and the wavelength conversion layer;
• and
• a second semiconductor portion provided between the second columnar unit and the wavelength conversion layer;
• a second semiconductor layer of a second conductivity type provided between the second columnar unit and the second semiconductor portion;
• and
• a light emitting layer provided between the second semiconductor portion and the second semiconductor layer and configured to emit a first light;
• a resin unit covering a side surface along the first direction of the first columnar unit, a side surface along the first direction of the second columnar unit, a side surface of the light emitting unit, and a surface on a side of the first columnar unit and the second columnar unit of the light emitting device;
• and
• an intermediate layer including:
• a first portion in contact with the first semiconductor layer and the wavelength conversion layer;
• and
• a second portion in contact with the resin unit and the wavelength conversion layer,
• having a thickness thinner than a peak wavelength of the first light, and including a material different from a material included in the wavelength conversion layer,
• wherein a linear expansion coefficient of the intermediate layer is larger than a linear expansion coefficient of the first semiconductor layer and smaller than a linear expansion coefficient of the wavelength conversion layer.