Light emitting diode

A light emitting diode, comprising:

• a substrate having a first surface and a second surface, the second surface is configured as a light emitting surface;
• a first semiconductor layer stacked on the substrate;
• an active layer stacked on the first semiconductor layer;
• and
• a second semiconductor layer stacked on the first surface of the substrate;
• a first electrode electrically connected with the first semiconductor layer;
• a second electrode electrically connected with the second semiconductor layer;
• a plurality of first three-dimensional nano-structures located on the first surface and aligned side by side, and a plurality of second three-dimensional nano-structures located on the second surface of the substrate and aligned side by side, wherein a cross section of each of the plurality of first three-dimensional nano-structure is M-shaped, and a cross section of each of the plurality of second three-dimensional nano-structure is M-shaped.

A light emitting diode, comprising:

• a substrate having a first surface and a second surface, the second surface is configured as a light emitting surface;
• a first semiconductor layer stacked on the substrate;
• an active layer stacked on the first semiconductor layer;
• and
• a second semiconductor layer stacked on the first surface;
• a first electrode electrically connected with the first semiconductor layer;
• a second electrode electrically connected with the second semiconductor layer;
• a plurality of three-dimensional nano-structures located on at least one surface of the substrate, wherein the plurality of three-dimensional nano-structures is aligned side by side, and a cross section of each of the plurality of three-dimensional nano-structures is M-shaped.