Electrolytically coated optoelectronic semiconductor component and method for producing an optoelectronic semiconductor component

A method for producing an optoelectronic semiconductor component comprising the following steps in the following order:

• a) providing a multiplicity of discrete substrateless optoelectronic semiconductor chips, wherein the substrateless optoelectronic semiconductor chips are separated from each other and each of the optoelectronic semiconductor chips has a first main face at a top side and a second main face at an underside;
• b) arranging and fixing the multiplicity of optoelectronic semiconductor chips on an intermediate carrier, wherein the optoelectronic semiconductor chips are arranged in a manner spaced apart from one another, such that a respective interspace is formed between two mutually directly adjacent optoelectronic semiconductor chips;
• c) filling the interspaces with an electrically insulating layer;
• applying a seed layer to that side of the optoelectronic semiconductor chips and of the electrically insulating layer which faces away from the intermediate carrier;
• and depositing a metallic carrier onto the seed layer electrolytically or in an electroless fashion.

An optoelectronic semiconductor component comprising:

• a substrateless optoelectronic semiconductor chip having a first main face at a top side and a second main face at an underside;
• a metallic carrier, which is arranged at the underside of the optoelectronic semiconductor chip;
• and
• an electrically insulating layer, which covers the metallic carrier at a outer surface of the metallic carrier which faces the optoelectronic semiconductor chip and which is free from the optoelectronic semiconductor chip,
• wherein the metallic carrier projects beyond the optoelectronic semiconductor chip in at least one lateral direction,
• wherein the metallic carrier is deposited electrolytically or in an electroless fashion at the second main face of the optoelectronic semiconductor chip, and
• wherein the electrically insulating layer reflects electromagnetic radiation that is to be emitted or detected by the optoelectronic semiconductor chip during operation, wherein the electrically insulating layer appears white.