Galium-nitride light emitting device having a microarray-type structure

A microarray-type nitride light emitting device, comprising:

• a substrate;
• a light emitting semiconductor layer comprised of a buffer layer, an n-type nitride contact layer, an active layer, and a p-type nitride contact layer arranged sequentially on the substrate and having a plane though which light is emitted;
• and
• a multilayered transparent contact layer to divide the plane of the light emitting semiconductor layer into a plurality of microarray-type light emitting regions and a plurality of connect-divided light emitting regions, the multilayered transparent contact layer including:
• a first transparent contact layer that is comprised of a material having a resistance value which is heat determinable, that has a resistance, and that is patterned so as to divide the plane of the light emitting semiconductor layer into the plurality of microarray-type light emitting regions;
• a transparent resistor layer that is defined within the first transparent contact layer, that is comprised of said material having a resistance value which is heat determinable and has a resistance that is higher than that of the first transparent contact layer, and that is effective to limit current flow to respective ones of the plurality of microarray-type light emitting regions so that the plurality of microarray-type light emitting regions are distinguished from each other, respectively;
• and
• a second transparent contact layer to connect the plurality of microarray-type light emitting regions,
• wherein the plurality of microarray-type light emitting regions are formed by laminating a pattern forming layer on the first transparent contact layer and by performing heat treatment of the first transparent contact layer.