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OwnerWilliam F. Seng, Richard L. Gloverinventors
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Wide band gap semiconductor wafers with previously unattainable characteristics and the method of processing and producing the same are disclosed and claimed herein. Specifically, the application discloses and claims a method to process silicon carbide and other similar wide band gap semiconductors in a microgravity environment. The wafers are placed onto stackable containment systems that create an appropriate gap between each wafer to allow for homogeneous heating and processing. The resulting wide band gap semiconductors have unique molecular structures not attainable when wide band gap semiconductors with the identical chemical composition are produced in a standard 1 gravity environment.
A wide band gap semiconductor wafer comprising a silicon carbide (SiC) substrate, the silicon carbide substrate comprising atoms arranged into their preferred, lowest energy state and with an extremely low defect density, the SiC substrate comprising the following ranges of material characteristics:
A wide band gap semiconductor wafer comprising a silicon carbide (SiC) substrate and one or more epi layers, the silicon carbide substrate and the one or more epi layers comprising atoms arranged into their preferred, lowest energy state and with an extremely low defect density, the SiC substrate and the one or more epi layers comprising the following ranges of material characteristics:
Dependencies are inferred from the claim text.