Films of nitrides of group 13 elements and layered body including the same
AssigneeNGK Insulators, Ltd.
InventorsMakoto Iwai, Takayuki Hirao, Takashi Yoshino
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Abstract
A film 3 of a nitride of a group 13 element is grown on a seed crystal substrate 11 by flux process from a melt containing a flux and a group 13 element under nitrogen containing atmosphere. The film 3 of a nitride of a group 13 element includes an inclusion distributed layer 3a in a region distant from an interface of the film of a nitride of group 13 element on the side of the seed crystal substrate 11 and containing inclusions derived from components of the melt, and an inclusion depleted layer 3b, with the inclusion depleted. provided on the layer 3a.
Claims9
A film of a nitride of a group 13 element, said film being grown on a seed crystal substrate from a melt comprising a flux and a group 13 element, said film comprising;
- an inclusion distributed layer in a region distant by 50 μm or less from an interface of said film of a nitride of a group 13 element on the side of said seed crystal substrate, said layer comprising inclusions derived from components of said melt and;
- an inclusion depleted layer with said inclusion depleted, said inclusion depleted layer being provided on said inclusion distributed layer,
- wherein said inclusion
- means a heterogenous phase surrounded by said nitride of said group 13 element,
- comprises an alloy of said flux and a metal of said group 13 element, a mixture of said metal of said group 13 element and said alloy, carbon, aggregate of fine crystals of said nitride of said group 13 element or polycrystalline material of said nitride of said group 13 element, and
- is observable by a transmission type optical microscope at a magnitude of 200.
Dependencies are inferred from the claim text.