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US 9,041,003 B2Granted
Semiconductor devices having a recessed electrode structure
AssigneeMassachusetts Institute of Technology
InventorsTomas Apostol Palacios, Bin Lu, Elison de Nazareth Matioli
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Abstract
An electrode structure is described in which conductive regions are recessed into a semiconductor region. Trenches may be formed in a semiconductor region, such that conductive regions can be formed in the trenches. The electrode structure may be used in semiconductor devices such as field effect transistors or diodes. Nitride-based power semiconductor devices are described including such an electrode structure, which can reduce leakage current and otherwise improve performance.
Claims14
A semiconductor structure, comprising:
- a semiconductor region including a III-N semiconductor material, the semiconductor region having trenches formed therein;
- a conductive electrode, the conductive electrode including conductive regions formed in the trenches of the semiconductor region;
- and
- an insulating region between the semiconductor region and the conductive electrode, the insulating region extending at least partially across an interface between the semiconductor region and the conductive electrode,
- wherein the semiconductor region is a first semiconductor region and the III-N semiconductor material is a first III-N semiconductor material, and wherein the semiconductor structure further comprises a second semiconductor region between the first semiconductor region and the conductive electrode, the second semiconductor region including a second III-N semiconductor material,
- wherein the first III-N semiconductor material includes GaN, and
- wherein the second III-N semiconductor material includes AlInGaN.
4 more elements
Dependencies are inferred from the claim text.