Pixel, a storage capacitor, and a method for forming the same

A method of manufacturing a pixel disposed on a substrate, the pixel including at least one switch element area and at least one capacitor area, and the method comprising:

• forming at least one semiconductor layer on a substrate of the switch element and the capacitor area;
• forming at least one first dielectric layer to cover the semiconductor layer and the substrate;
• forming at least one first conductive layer, at least one second dielectric layer, and at least one etching-stop layer in sequence on the first dielectric layer;
• patterning the first conductive layer, the second dielectric layer, and the etching-stop layer to form a gate stack structure on the switch element area and a capacitor stack structure on the capacitor area;
• forming at least one interlayer dielectric layer to cover the gate stack structure, the capacitor stack structure, and the first dielectric layer;
• forming at least one source/drain on a part of the interlayer dielectric layer of the switch element area, and the source/drain is electrically connected to the semiconductor layer of the switch element area;
• forming at least one passivation layer to cover the source/drain and the interlayer dielectric layer;
• patterning the passivation layer and the interlayer dielectric layer to form a contact window in the passivation layer and an opening in the passivation layer and the interlayer dielectric layer, and the opening exposes the etching-stop layer;
• selectively etching the etching-stop layer till a part of the second dielectric layer is exposed;
• and
• forming at least one second conductive layer on a part of the passivation layer, and the second conductive layer is electrically connected to one of the source/drain through the contact window and is formed on a part of the exposed second dielectric layer through the opening in the passivation layer and the interlayer dielectric layer wherein the second dielectric layer and the first conductive layer form the capacitor stack structure, and a lateral side of the stacking structure has a substantially tapered shape.