Semiconductor device and method for manufacturing the same

A semiconductor device comprising:

• a gate electrode;
• an oxide semiconductor layer adjacent to the gate electrode;
• an insulating layer between the gate electrode and the oxide semiconductor layer;
• a source electrode electrically connected to the oxide semiconductor layer through a source region;
• and
• a drain electrode electrically connected to the oxide semiconductor layer through a drain region,
• wherein the gate electrode comprises a stack of a first layer comprising copper and a second layer comprising a conductive material having heat resistance higher than copper, and
• wherein each of the source region and the drain region comprises a Ga—Zn—O—N based material.

A semiconductor device comprising:

• a gate electrode;
• an oxide semiconductor layer adjacent to the gate electrode;
• an insulating layer between the gate electrode and the oxide semiconductor layer;
• a source electrode electrically connected to the oxide semiconductor layer through a source region;
• and
• a drain electrode electrically connected to the oxide semiconductor layer through a drain region,
• wherein the gate electrode comprises a stack of a first layer comprising copper and a second layer comprising a conductive material having heat resistance higher than copper, and
• wherein each of the source region and the drain region comprises an In—Ga—Zn—O—N based material.