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US 9,040,980 B2Granted
Transistor with an oxide semiconductor layer
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorMasami Endo
Life of this patent
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Abstract
It is an object to provide a semiconductor device for high power application which has good properties. A means for solving the above-described problem is to form a transistor described below. The transistor includes a source electrode layer; an oxide semiconductor layer in contact with the source electrode layer; a drain electrode layer in contact with the oxide semiconductor layer; a gate electrode layer part of which overlaps with the source electrode layer, the drain electrode layer, and the oxide semiconductor layer; and a gate insulating layer in contact with an entire surface of the gate electrode layer.
Claims13
A transistor comprising:
- a source electrode layer;
- an oxide semiconductor layer in contact with the source electrode layer;
- a drain electrode layer in contact with the oxide semiconductor layer;
- a first gate electrode layer,
- wherein part of the first gate electrode layer overlaps with the source electrode layer, the drain electrode layer, and the oxide semiconductor layer;
- a second gate electrode layer,
- wherein part of the second gate electrode layer overlaps with the source electrode layer, the drain electrode layer, and the oxide semiconductor layer;
- a first gate insulating layer in contact with a surface of the first gate electrode layer;
- and
- a second gate insulating layer in contact with a surface of the second gate electrode layer,
- wherein the first gate insulating layer on a bottom surface side of the first gate electrode layer is in contact with the source electrode layer,
- wherein the second gate insulating layer on a bottom surface side of the second gate electrode layer is in contact with the source electrode layer,
- wherein the first gate insulating layer on an upper surface side of the first gate electrode layer is in contact with the oxide semiconductor layer, and
- wherein the second gate insulating layer on an upper surface side of the second gate electrode layer is in contact with the oxide semiconductor layer,
- wherein the first gate electrode layer has a first comb-shaped electrode and the second gate electrode layer has a second comb-shaped electrode,
- wherein first side surfaces of the first comb-shaped electrode and second side surfaces of the second comb-shaped electrode have tapered shapes,
- wherein one of the first side surfaces and one of the second side surfaces are opposed to each other, and
- wherein the oxide semiconductor layer and a part of the drain electrode layer is interposed between the one of the first side surfaces of the first comb-shaped electrode and the one of the second side surfaces of the second comb-shaped electrode.
15 more elements
A transistor comprising:
- a source electrode layer;
- an oxide semiconductor layer comprising indium, gallium and zinc in contact with the source electrode layer;
- a drain electrode layer in contact with the oxide semiconductor layer;
- a first gate electrode layer,
- wherein part of the first gate electrode layer overlaps with the source electrode layer, the drain electrode layer, and the oxide semiconductor layer;
- a second gate electrode layer,
- wherein part of the second gate electrode layer overlaps with the source electrode layer, the drain electrode layer, and the oxide semiconductor layer;
- a first gate insulating layer in contact with a surface of the first gate electrode layer;
- and
- a second gate insulating layer in contact with a surface of the second gate electrode layer,
- wherein the first gate insulating layer on a bottom surface side of the first gate electrode layer is in contact with the source electrode layer,
- wherein the second gate insulating layer on a bottom surface side of the second gate electrode layer is in contact with the source electrode layer,
- wherein the first gate insulating layer on an upper surface side of the first gate electrode layer is in contact with the oxide semiconductor layer, and
- wherein the second gate insulating layer on an upper surface side of the second gate electrode layer is in contact with the oxide semiconductor layer,
- wherein the first gate electrode layer has a first comb-shaped electrode and the second gate electrode layer has a second comb-shaped electrode,
- wherein first side surfaces of the first comb-shaped electrode and second side surfaces of the second comb-shaped electrode have tapered shapes,
- wherein one of the first side surfaces and one of the second side surfaces are opposed to each other, and
- wherein the oxide semiconductor layer and a part of the drain electrode layer is interposed between the one of the first side surfaces of the first comb-shaped electrode and the one of the second side surfaces of the second comb-shaped electrode.
15 more elements
Dependencies are inferred from the claim text.