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AssigneeSony Corporation
InventorNorihito Kobayashi
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Provided is a method of producing an organic transistor, including collectively forming a gate insulating film and an organic semiconductor film by applying, onto a gate electrode, a solution including a polymer and at least one of compounds represented by General Formulas 1 to 4 and 5 to 7, a compound having a structure represented by General Formula 4, a compound having a structure represented by General Formula 5 or 6, and forming a source electrode and a drain electrode on the organic semiconductor film. (where R is a linear or branched alkyl group) (where R is an alkyl group) (where R is an alkyl group) (where A1 and A2 are represented by Formula 8) (where R is an alkyl group or another substituent).
A method of producing an organic transistor, the method comprising:
An organic transistor comprising:
An electronic apparatus comprising:
A method of producing a semiconductor device, the method comprising:
A semiconductor device comprising:
An electronic apparatus comprising:
Dependencies are inferred from the claim text.