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US 9,040,964 B2Granted
Thin film semiconductor device and organic light-emitting display apparatus
AssigneeSamsung Display Co., Ltd.
InventorKi-Yeol Byun
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Abstract
An apparatus and a method of manufacturing a thin film semiconductor device having a thin film transistor with improved electrical properties in organic light-emitting display apparatus are described.
Claims11
A thin film semiconductor device comprising:
- a substrate;
- an active pattern on the substrate and comprising a rounded upper edge portion;
- a first gate insulation film exposing the rounded upper edge portion of the active pattern and covering a flat upper surface of the active pattern;
- a second gate insulation film covering the rounded upper edge portion of the active pattern and covering the first gate insulation film;
- and
- a gate electrode overlapping a part of the active pattern,
- wherein the first gate insulation film and the second gate insulation film are interposed between the active pattern and the gate electrode.
4 more elements
A thin film semiconductor device comprising:
- a substrate;
- an active pattern on the substrate and comprising a rounded upper edge portion and a rounded lower edge portion;
- a first buffer film on the substrate;
- and
- a second buffer film on the first buffer film and contacting a flat lower surface of the active pattern without contacting the rounded lower edge portion of the active pattern.
2 more elements
An organic light-emitting display apparatus comprising:
- a substrate;
- a plurality of thin film transistors on the substrate;
- a pixel electrode electrically connected to one of the plurality of thin film transistors;
- an opposed electrode on the pixel electrode;
- and
- an interlayer between the pixel electrode and the opposed electrode, and comprising an organic light-emitting layer,
- wherein the at least one of the plurality of thin film transistors further comprises:
- an active pattern on the substrate and comprising a rounded upper edge portion;
- a first gate insulation film exposing the rounded upper edge portion and covering a flat portion of an upper surface of the active pattern;
- a second gate insulation film covering the rounded upper edge portion and the first gate insulation film;
- and
- a gate electrode on the first gate insulation film and the second gate insulation film, and overlapping part of the active pattern.
9 more elements
Dependencies are inferred from the claim text.