Transistors and methods of manufacturing the same
AssigneeSamsung Electronics Co., Ltd.
InventorsChang-seung Lee, Yong-sung Kim, Joo-ho Lee, Yong-seok Jung
Life of this patent
Estimating the term…
Abstract
Transistors, and methods of manufacturing the transistors, include graphene and a material converted from graphene. The transistor may include a channel layer including graphene and a gate insulating layer including a material converted from graphene. The material converted from the graphene may be fluorinated graphene. The channel layer may include a patterned graphene region. The patterned graphene region may be defined by a region converted from graphene. A gate of the transistor may include graphene.
Claims22
A transistor, comprising:
- a channel layer including graphene;
- a gate insulating layer on a surface of the channel layer, the gate insulating layer including fluorinated graphene;
- a gate facing the channel layer, the gate insulating layer being between the gate and the channel layer;
- and
- a source and a drain electrically connected to first and second regions of the channel layer, respectively.
A transistor, comprising:
- a channel layer including a region comprised of graphene with a chemical modifier attached and a patterned graphene region defined by the region;
- a gate insulating layer on a surface of the channel layer, the gate insulating layer including fluorinated graphene;
- a gate facing the channel layer, the gate insulating layer being between the gate and the channel layer;
- and
- a source and a drain electrically connected to first and second regions of the channel layer, respectively.
A transistor, comprising:
- a channel layer, a gate insulating layer, a gate, a source, and a drain,
- wherein the channel layer, the gate insulating layer, and the gate include at least one of graphene and a material comprised of graphene with a chemical modifier attached.
Dependencies are inferred from the claim text.