Field effect transistor using graphene

A field effect transistor comprising:

• a substrate;
• a graphene channel layer on the substrate,
• the graphene channel layer defining a slit;
• a source electrode and a drain electrode on opposite ends of the graphene channel layer;
• a gate electrode below the graphene channel layer;
• and
• a gate insulation layer between the graphene channel layer and the gate electrode;
• a potential barrier material filling the slit of the graphene channel layer,
• the potential barrier material is configured to induce Fowler-Nordheim (F-N) tunneling through the graphene channel layer when a gate voltage is applied to the gate electrode.

A field effect transistor comprising:

• a substrate;
• a graphene channel layer on the substrate,
• the graphene channel layer defining at least one slit;
• a source electrode and a drain electrode that are spaced apart on at least one of the graphene layer and the substrate;
• a gate electrode on the substrate;
• a gate insulation layer between the gate electrode and the graphene channel layer.