US 9,040,955 B2 · Semiconductor device, optical sensor device and semiconductor device manufacturing method

Abstract

Provided are a semiconductor device and an optical sensor device, each having reduced dark current, and detectivity extended toward longer wavelengths in the near-infrared. Further, a method for manufacturing the semiconductor device is provided. The semiconductor device 50 includes an absorption layer 3 of a type II (GaAsSb/InGaAs) MQW structure located on an InP substrate 1, and an InP contact layer 5 located on the MQW structure. In the MQW structure, a composition x (%) of GaAsSb is not smaller than 44%, a thickness z (nm) thereof is not smaller than 3 nm, and z≧−0.4x+24.6 is satisfied.

Claims11

Dependent claims

A semiconductor device formed on a group III-V semiconductor substrate, comprising:

an absorption layer of a type II multiple quantum well structure, located on the group III-V semiconductor substrate, wherein
the multiple quantum well structure is composed of a repetition of a layer containing at least Ga, As, and Sb, and a layer containing at least In, Ga, and As, and
the layer containing at least Ga, As, and Sb has an Sb composition x (at. %) and a thickness z (nm) which satisfy the following equations:
54 at. % <x(at. %)<68 at. %,
3 nm<z(nm)<10 nm, and
z(nm)<−0.625x(at. %)+45.5 nm.

3 more elements

Dependencies are inferred from the claim text.

Facts

Application

13/505,226Filed 19 May 2011

Priority

JP 2010-1281623 Jun 2010

Published

US 2012/0217478 A130 Aug 2012

Granted

26 May 2015

Term ends

Not estimatedThe source records don’t support an estimate.

Classification7 codes

H10F 77/146
Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies: superlattices;…
B82Y 20/00
Nanooptics
H10F 30/223
The devices having only one potential barrier, e.g. photodiodes: the potential barrier being a PIN barrier
H10F 71/1272
The active layers comprising only Group III-V materials, e.g. GaAs or InP: comprising at least three elements, e.g. GaAlAs or InGaAsP

Semiconductor device, optical sensor device and semiconductor device manufacturing method

Life of this patent

Semiconductor device, optical sensor device and semiconductor device manufacturing method

Life of this patent

Abstract

Claims11