Semiconductor light emitting device and method for manufacturing the same
AssigneeLG Innotek Co., Ltd.
InventorsTae Yun Kim, Hyo Kun Son
Life of this patent
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Abstract
A semiconductor light emitting device includes a first nitride semiconductor layer, a dopant doped semiconductor layer on the first nitride semiconductor layer, an active layer on the dopant doped semiconductor layer, a delta doped layer on the active layer, a superlattice structure on the delta doped layer, an undoped layer on the superlattice layer, a second nitride semiconductor layer including a first n-type dopant, a third nitride semiconductor layer including a second n-type dopant, and a fourth nitride semiconductor layer including a third n-type dopant.
Claims20
A light emitting device comprising:
- a first conductive type semiconductor layer;
- a first delta doped layer on the first conductive type semiconductor layer;
- a super lattice structure on the first delta doped layer;
- an active layer on the super lattice layer;
- a second conductive type cladding layer on the active layer;
- and
- a second conductive type semiconductor layer on the second conductive type cladding layer,
- wherein a ratio of a thickness of the super lattice structure to a thickness of the first delta doped layer is in a range of about 1 to 100.
A light emitting device comprising:
- a first conductive type semiconductor layer comprising an AlGaN layer;
- a first delta doped layer on the first conductive type semiconductor layer;
- a super lattice structure on the first delta doped layer;
- a second delta doped layer on the super lattice structure;
- an active layer on the second delta doped layer;
- a second conductive type cladding layer on the active layer;
- and
- a second conductive type semiconductor layer on the second conductive type cladding layer,
- wherein a ratio of a thickness of the super lattice structure to a thickness of the first delta doped layer is in a range of about 1 to 100.
A light emitting device comprising:
- a first conductive type semiconductor layer comprising an AlGaN layer;
- a first delta doped layer on the first conductive type semiconductor layer;
- a second delta doped layer on the first delta doped layer;
- a super lattice structure on the first delta doped layer;
- a third delta doped layer on the super lattice structure;
- an active layer on a third delta doped layer;
- a second conductive type cladding layer on the active layer;
- and
- a second conductive type semiconductor layer on the second conductive type cladding layer,
- wherein a ratio of a thickness of the super lattice structure to a thickness of the first delta doped layer is in a range of about 1 to 100.
Dependencies are inferred from the claim text.