Storage device
AssigneeKabushiki Kaisha Toshiba
InventorsYusuke Arayashiki, Hidenori Miyagawa, Tomohito Kawashima
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Abstract
According to one embodiment, a storage device includes first electrodes, second electrodes, a resistance change layer provided between the first electrodes and the second electrodes, and ion metal particles that are formed in an island form between the first electrodes and the resistance change layer and that contain a metal movable inside the resistance change layer. The first electrodes and the second electrodes are formed of a material which is more unlikely to be ionized as compared to the metal, and the first electrodes are in contact with the resistance change layer in an area around the ion metal particles.
Claims20
A storage device, comprising:
- a first electrode;
- a second electrode;
- a resistance change layer disposed between the first electrode and the second electrode;
- and
- a plurality of islands that are disposed between the first electrode and a surface of the resistance change layer, the plurality of islands each comprising a metal movable inside the resistance change layer, wherein
- the first electrode and the second electrode are formed of a material which is less likely to be ionized as compared to the metal, and
- the first electrode is in contact with the surface of the resistance change layer at regions that are not covered by the plurality of islands.
A storage device, comprising:
- a first electrode;
- a second electrode;
- a resistance change layer disposed between the first electrode and the second electrode;
- and
- a plurality of islands that are disposed between the first electrode and a surface of the resistance change layer, the plurality of islands each comprising a metal that will diffuse within the resistance change layer when an electrical bias is applied between the first electrode and the second electrode,
- wherein the first electrode is in contact with the surface of the resistance change layer at regions that are not covered by the plurality of islands.
A method of forming a storage device, comprising:
- forming a first conductive layer on a surface of a substrate;
- forming a resistance change layer over a surface of the formed first conductive layer;
- forming a plurality of islands on a surface of the resistance change layer, the plurality of islands each comprising a metal;
- and
- forming a second conductive layer on a surface of the formed resistance change layer and on a surface of the plurality of islands,
- wherein the metal diffuses within the resistance change layer when an electrical bias is applied across a portion of the first conductive layer and the a portion of the second conductive layer.
Dependencies are inferred from the claim text.