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US 9,040,952 B2Granted
Semiconductor device and method of fabricating the same
AssigneeSK hynix Inc.
InventorTaejung Ha
Life of this patent
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Abstract
A semiconductor device includes a first conductive layer extending in a first direction, a second conductive layer extending in a second direction and disposed over the first conductive layer, the first and second directions being substantially perpendicular to each other, and a variable resistance layer disposed over the first conductive layer, the variable resistance layer extending in the second direction. An upper portion of the variable resistance layer is disposed between lower portions of two neighboring second conductive layers including the second conductive layer.
Claims11
A semiconductor device, comprising:
- a first conductive layer extending in a first direction;
- a second conductive layer extending in a second direction and disposed over the first conductive layer, the first and second directions being substantially perpendicular to each other;
- and
- a variable resistance layer disposed over the first conductive layer, the variable resistance layer extending in the second direction,
- wherein an upper portion of the variable resistance layer is disposed between lower portions of two neighboring second conductive layers including said second conductive layer.
2 more elements
Dependencies are inferred from the claim text.