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US 9,040,950 B2Granted
Nonvolatile memory device and method for manufacturing same
AssigneeKabushiki Kaisha Toshiba
InventorKouji Matsuo
Life of this patent
Estimating the term…
Abstract
According to one embodiment, a nonvolatile memory device includes a first interconnect, an insulating layer, a needle-like metal oxide, and a second interconnect. The insulating layer is provided on the first interconnect. The needle-like metal oxide pierces the insulating layer in a vertical direction. The second interconnect is provided on the insulating layer.
Claims24
A nonvolatile memory device, comprising:
- a first interconnect;
- an insulating layer provided on the first interconnect;
- a needle-like metal oxide piercing the insulating layer to extend throughout an entire thickness of the insulating layer in a vertical direction;
- and
- a second interconnect provided on the insulating layer;
- wherein
- the insulating layer is formed of an oxide, and
- an absolute value of a change of a Gibbs free energy per mole of oxygen atoms when a metal included in the needle-like metal oxide changes into a metal oxide of the needle-like metal oxide is less than an absolute value of a change of a Gibbs free energy per mole of oxygen atoms when a metal or a semimetal included in the insulating layer changes into the oxide of the insulating layer;
- and
- further comprising a lower electrode layer provided between the first interconnect and the insulating layer to contact the insulating layer,
- the needle-like metal oxide being formed of an oxide of the same type of metal as a metal included in the lower electrode layer.
8 more elements
A nonvolatile memory device, comprising:
- a first interconnect;
- an insulating layer provided on the first interconnect;
- a needle-like metal oxide piercing the insulating layer to extend throughout an entire thickness of the insulating layer in a vertical direction;
- a second interconnect provided on the insulating layer;
- and
- a lower electrode layer provided between the first interconnect and the insulating layer to contact the insulating layer,
- the needle-like metal oxide being formed of an oxide of the same type of metal as a metal included in the lower electrode layer.
4 more elements
A nonvolatile memory device, comprising:
- a first interconnect;
- an insulating layer provided on the first interconnect;
- a needle-like metal oxide piercing the insulating layer to extend throughout an entire thickness of the insulating layer in a vertical direction;
- and
- a second interconnect provided on the insulating layer;
- wherein:
- the second interconnect and the first interconnect extend in mutually intersecting directions;
- a first interconnect layer including a plurality of the first interconnects is stacked alternately with a second interconnect layer including a plurality of the second interconnects;
- and
- the insulating layer is provided between the first interconnects and the second interconnects.
7 more elements
Dependencies are inferred from the claim text.