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US 9,040,912 B2Granted
Infrared sensing element and infrared imaging device
AssigneeSony Corporation
InventorsHidetoshi Kabasawa, Minoru Wakabayashi
Life of this patent
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Abstract
An infrared sensing element is provided and includes a substrate, a supporting electrical insulating layer formed on the substrate; a first electrode formed on the supporting electrical insulating layer, a pyroelectric layer formed on the first electrode, and a second electrode formed on the pyroelectric layer. The pyroelectric layer has a light receiving area of 1×102 to 1×104 μm2, has a thickness of 0.8 to 10 μm, and contains therein a compound expressed as Pb(ZrxTi1-x)O3, where 0.57<x<0.93 as a principal component.
Claims15
An infrared sensing element comprising:
- a substrate;
- a supporting electrical insulating layer formed on the substrate;
- a first electrode formed on the supporting electrical insulating layer;
- a pyroelectric layer formed on the first electrode;
- an insulating layer formed on a side surface of the first electrode and the pyroelectric layer;
- and
- a second electrode directly formed on the pyroelectric layer and the insulating layer, one end of the second electrode extending on a side surface of the insulating layer to be connected to a terminal deriving portion formed between the substrate and the supporting electrical insulating layer,
- wherein the pyroelectric layer has a light receiving area of 1×102 to 1×104 μm2, has a thickness of 0.8 to 10 μm, and contains therein a compound expressed as Pb(ZrxTi1-x)O3, where 0.57<x<0.93 as a principal component.
5 more elements
An infrared imaging device comprising:
- plural pyroelectric type infrared sensing elements;
- a light condensing portion configured to condense an infrared ray to the plural pyroelectric type infrared sensing elements;
- an electric charge controlling portion configured to control output of electric charges obtained in the plural pyroelectric type infrared sensing elements by radiation of the infrared ray;
- and
- a signal processing circuit for converting outputs from the plural pyroelectric type infrared sensing elements into signals, thereby obtaining an infrared image,
- each of the plural pyroelectric type infrared sensing elements, including
- a substrate,
- a supporting electrical insulating layer formed on the substrate,
- a first electrode formed on the supporting electrical insulating layer, a pyroelectric layer formed on the first electrode,
- an insulating layer formed on a side surface of the first electrode and the pyroelectric layer;
- and
- a second electrode directly formed on the pyroelectric layer and the insulating layer, one end of the second electrode extending on a side surface of the insulating layer to be connected to a terminal deriving portion formed between the substrate and the supporting electrical insulating layer,
- wherein the pyroelectric layer has a light receiving area of 1×102 to 1×104 μm2, has a thickness of 0.8 to 10 μm, and contains therein a compound expressed as Pb(ZrxTi1-x)O3, where 0.57<x<0.93 as a principal component.
10 more elements
Dependencies are inferred from the claim text.